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| Country of Origin | China |
|---|---|
| Brand | Wolfspeed |
| Height | 5.21mm |
| Length | 16.13mm |
| Model | C3M0280090D |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | C3M |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11.5A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 360mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 54W |
| Typical Gate Charge Qg @ Vgs | 9.5nC |
| Maximum Gate Source Voltage Vgs | -8, +18V |
| Forward Voltage Vf | 4.4V |
Wolfspeed C3M0280090D is a high-performance N-Channel enhancement mode Silicon Carbide (SiC) power MOSFET designed for efficient power conversion and switching applications. Featuring a 900 V drain-source voltage and 11.5 A continuous drain current, this device enables robust operation in demanding industrial, automotive, and power management environments.
The MOSFET utilizes Wolfspeed's advanced second-generation SiC technology, offering industry-leading power density, high switching speeds, and low on-resistance, which reduces conduction losses and thermal build-up. Its low gate charge and enhancement mode operation facilitate straightforward drive circuitry and easy paralleling of multiple devices for scalable power solutions.
Housed in a rugged TO-247 3-pin package suitable for through-hole mounting, the C3M0280090D supports improved heat dissipation, allowing up to 54 watts of power dissipation. It operates reliably across a wide temperature range from -55°C to 150°C, making it ideal for industrial controls, renewable energy inverters, UPS systems, and other power electronic applications.
Key engineering benefits include latch-up resistance, reduced cooling requirements due to efficient switching, and the ability to operate at high switching frequencies. Typical gate charge of 9.5 nC and maximum gate-source voltage ratings of -8 V to +18 V provide flexible drive options for designers.
The device features a maximum drain-source resistance of 360 milliohms, minimizing conduction losses. Package dimensions of 16.13 mm length, 21.1 mm width, and 5.21 mm height support compact PCB designs. Operating voltage ratings suit high-voltage power supply and motor drive applications.
Manufactured in China with quality assurance standards ensuring device reliability.
This Wolfspeed MOSFET is an excellent choice for engineers seeking high-efficiency, high-voltage semiconductor switches suitable for industrial automation, laboratory equipment, and commercial electronics.
Discover more Wolfspeed semiconductor products and related industrial components on EnvMart to enhance your power electronics projects with superior quality components.
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