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Wolfspeed N-Channel Enhancement MOSFET 900 V, 11.5 A, TO-247 Package C3M0280090D

Category MOSFET Brand Wolfspeed Condition New

Specifications

Country of Origin China
Brand Wolfspeed
Height 5.21mm
Length 16.13mm
Model C3M0280090D
Width 21.1mm
Mount Type Through Hole
Series C3M
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 11.5A
Maximum Drain Source Voltage Vds 900V
Maximum Drain Source Resistance Rds 360mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 54W
Typical Gate Charge Qg @ Vgs 9.5nC
Maximum Gate Source Voltage Vgs -8, +18V
Forward Voltage Vf 4.4V

Key Features

  • The device supports a maximum continuous drain current of 11.5 amperes.
  • Enhancement mode channel provides easy parallel operation and fast switching.
  • Low on-resistance with a maximum drain-source resistance of 360 milliohms.
  • Maximum power dissipation of 54 watts supports high power applications.
  • Package type TO-247 allows through-hole mounting and improved heat dissipation.
  • Wide operating temperature range from -55°C to 150°C ensures reliability under harsh conditions.
  • Typical gate charge is 9.5 nano-Coulombs at gate-source voltage.
  • High maximum gate voltage tolerance up to +18 V and down to -8 V.

Product Description

Wolfspeed C3M0280090D is a high-performance N-Channel enhancement mode Silicon Carbide (SiC) power MOSFET designed for efficient power conversion and switching applications. Featuring a 900 V drain-source voltage and 11.5 A continuous drain current, this device enables robust operation in demanding industrial, automotive, and power management environments.

The MOSFET utilizes Wolfspeed's advanced second-generation SiC technology, offering industry-leading power density, high switching speeds, and low on-resistance, which reduces conduction losses and thermal build-up. Its low gate charge and enhancement mode operation facilitate straightforward drive circuitry and easy paralleling of multiple devices for scalable power solutions.

Housed in a rugged TO-247 3-pin package suitable for through-hole mounting, the C3M0280090D supports improved heat dissipation, allowing up to 54 watts of power dissipation. It operates reliably across a wide temperature range from -55°C to 150°C, making it ideal for industrial controls, renewable energy inverters, UPS systems, and other power electronic applications.

Key engineering benefits include latch-up resistance, reduced cooling requirements due to efficient switching, and the ability to operate at high switching frequencies. Typical gate charge of 9.5 nC and maximum gate-source voltage ratings of -8 V to +18 V provide flexible drive options for designers.

The device features a maximum drain-source resistance of 360 milliohms, minimizing conduction losses. Package dimensions of 16.13 mm length, 21.1 mm width, and 5.21 mm height support compact PCB designs. Operating voltage ratings suit high-voltage power supply and motor drive applications.

Manufactured in China with quality assurance standards ensuring device reliability.

This Wolfspeed MOSFET is an excellent choice for engineers seeking high-efficiency, high-voltage semiconductor switches suitable for industrial automation, laboratory equipment, and commercial electronics.

Discover more Wolfspeed semiconductor products and related industrial components on EnvMart to enhance your power electronics projects with superior quality components.

Wolfspeed N-Channel Enhancement MOSFET 900 V, 11.5 A, TO-247 Package C3M0280090D
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Frequently Asked Questions

The maximum continuous drain current for this model is 11.5 amperes.

This MOSFET has a maximum drain-source voltage rating of 900 volts.

The device is housed in a TO-247 package type, which allows for through-hole mounting.

It supports a maximum power dissipation of 54 watts.

The typical gate charge is 9.5 nano-Coulombs at gate-source voltage.

This model operates reliably across a wide temperature range from -55°C to 150°C.

The maximum drain-source resistance is 360 milliohms.

The dimensions are 16.13 mm in length, 21.1 mm in width, and 5.21 mm in height.

It has a maximum gate-source voltage tolerance of +18 V and down to -8 V.

This device features an N-channel enhancement mode.

It is suitable for industrial controls, renewable energy inverters, UPS systems, and other power electronic applications.

This MOSFET is manufactured in China.

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