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Wolfspeed Power N-Channel MOSFET Module 193 A 1.2 kV Enhancement 7-Pin CAS120M12BM2
Specifications
| Country of Origin | India |
|---|---|
| Brand | Wolfspeed |
| Height | 30mm |
| Length | 106.4mm |
| Model | CAS120M12BM2 |
| Width | 61.4mm |
| Maximum Operating Temperature | 150°C |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 7 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 193A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 30mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 925W |
| Typical Gate Charge Qg @ Vgs | 378nC |
| Maximum Gate Source Voltage Vgs | -10, +25V |
| Forward Voltage Vf | 2.4V |
| Transistor Configuration | Series |
Key Features
- This N-Channel enhancement mode MOSFET is designed for high power applications.
- Maximum power dissipation rating of 925 W enables efficient heat management.
- The module features ultra-low drain source resistance of 30 milliohms for reduced conduction losses.
- Wide operating temperature range from -40°C to 150°C supports demanding industrial environments.
- Typical gate charge of 378 nC at Vgs ensures fast switching performance.
- Maximum gate source voltage ratings of -10 V to +25 V guarantee reliable operation.
- The device has a forward voltage drop of 2.4 V to optimize efficiency.
- Robust copper baseplate with aluminium nitride insulator reduces thermal resistance.
Product Description
Wolfspeed CAS120M12BM2 is a high-performance Silicon Carbide Power MOSFET module featuring a 7-pin package suitable for industrial power electronics applications.
This N-Channel enhancement mode MOSFET supports a maximum continuous drain current of 193 A and a drain source voltage of 1.2 kV, making it suitable for high voltage and high current scenarios.
The device offers maximum power dissipation of 925 W and low drain source resistance of 30 milliohms to enhance efficiency and thermal performance.
Operating temperature range from -40°C to 150°C allows reliable function in harsh environments. Typical gate charge of 378 nC at gate-source voltage facilitates fast switching with minimal loss.
Maximum gate source voltage ratings of -10 V to +25 V ensure safe gate drive while the forward voltage of 2.4 V helps minimize conduction losses. Wolfspeed's design includes a copper baseplate and aluminium nitride insulator to effectively dissipate heat, improving reliability and lifespan of power systems.
This MOSFET module is compliant with RoHS directives, ensuring material safety and environmental friendliness.
Widely used across industrial sectors, it is ideal for induction heating, solar and wind energy inverters, DC-DC converters, 3-phase power factor correction, line regeneration drives, uninterruptible power supplies (UPS), switched-mode power supplies (SMPS), motor drives, and battery charging cycles.
This N-Channel enhancement mode MOSFET is designed for high power applications. Maximum power dissipation rating of 925 W enables efficient heat management. The module features ultra-low drain source resistance of 30 milliohms for reduced conduction losses.
Wide operating temperature range from -40°C to 150°C supports demanding industrial environments. Typical gate charge of 378 nC at Vgs ensures fast switching performance. Maximum gate source voltage ratings of -10 V to +25 V guarantee reliable operation.
The device has a forward voltage drop of 2.4 V to optimize efficiency. Robust copper baseplate with aluminium nitride insulator reduces thermal resistance. Complies with RoHS standards ensuring use of environmentally friendly materials.
Ideal for applications including induction heating, solar and wind inverters, UPS and motor drives. Explore Wolfspeed products and power semiconductor solutions at EnvMart for advanced industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 193 A.
This MOSFET module has a maximum drain source voltage rating of 1.2 kV.
The maximum power dissipation rating of this module is 925 W.
The operating temperature range for this MOSFET module is from -40°C to 150°C.
The typical gate charge at Vgs for this model is 378 nC.
This module features a low drain source resistance of 30 milliohms.
The maximum gate source voltage ratings for this model are -10 V to +25 V.
The forward voltage drop for this MOSFET module is 2.4 V.
This MOSFET module has a pin count of 7.
The module features a robust copper baseplate with an aluminium nitride insulator to reduce thermal resistance.
This model complies with RoHS standards, ensuring the use of environmentally friendly materials.
This module is suitable for applications such as induction heating, solar and wind energy inverters, UPS, and motor drives.
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