$1.60
$1.55
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay E Series N-Channel Enhancement MOSFET, 4.3 A, 650 V, 3-Pin TO-220 SiHA690N60E-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 13.8mm |
| Length | 10.3mm |
| Model | SiHA690N60E-GE3 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.3A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 700mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 29W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed using 4th generation E series technology for enhanced efficiency.
- Low effective capacitance reduces switching and conduction losses.
- Maximum power dissipation of 29 W enables reliable operation under load.
- Wide operating temperature range from -55°C to 150°C supports diverse applications.
- Through-hole mounting ensures robust mechanical and electrical connection.
- Maximum gate-source voltage rating of 30 V suits standard gate drive requirements.
- Low maximum drain-source resistance of 700 mΩ improves conduction efficiency.
- Typical gate charge of 12 nC minimizes switching losses for power electronics.
Product Description
Vishay SiHA690N60E-GE3 is a high-performance E Series power MOSFET designed for industrial and electronic component applications requiring efficient switching and power handling. This device is an N-Channel enhancement MOSFET with a continuous drain current of 4.3 A and a maximum drain-source voltage of 650 V, housed in a 3-pin TO-220 package optimized for through-hole mounting.
Developed using 4th generation E series technology, the MOSFET features a low figure-of-merit and minimized effective capacitance which significantly reduce switching and conduction losses, improving energy efficiency in power conversion systems. It is rated for avalanche energy (UIS), offering enhanced ruggedness and reliability in demanding electrical environments.
The MOSFET operates within a broad temperature range from -55°C to 150°C, making it suitable for a variety of industrial, manufacturing, and electronic equipment applications where thermal stability is critical. Its maximum power dissipation is 29 W, allowing this part to handle substantial load conditions without compromise.
Key electrical characteristics include a maximum gate-source voltage of 30 V, a maximum drain-source resistance of 700 mΩ, forward voltage of 1.2 V, and a typical gate charge of 12 nC which contributes to its efficient switching performance. The compact package dimensions of 10.3 mm length, 4.7 mm width, and 13.8 mm height ensure easy integration into printed circuit boards.
Designed with low effective capacitance for reduced losses. Robust construction supports industrial and electronic device applications. Suitable for power management, semiconductor electronics, and discrete device usage.
Through-hole TO-220 package offers mechanical stability and easy PCB mounting. Broad operating temperature and high voltage ratings ensure reliable performance.
This Vishay MOSFET is ideal for applications in industrial electronics, power converters, automation systems, and other demanding environments requiring efficient power switching components. Explore similar MOSFETs and discrete semiconductors in the Electronics & Electricals category on EnvMart for more options to suit your project needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 4.3 A.
The maximum drain-source voltage rating is 650 V.
It operates within a temperature range from -55°C to 150°C.
The maximum power dissipation is 29 W.
This model supports through-hole mounting.
The maximum gate-source voltage rating is 30 V.
The maximum drain-source resistance is 700 mΩ.
The typical gate charge is 12 nC.
The package dimensions are 10.3 mm in length, 4.7 mm in width, and 13.8 mm in height.
The forward voltage rating is 1.2 V.
This model utilizes an N-channel type.
It belongs to the E series of MOSFETs.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$1.64
$1.59
-3%
New
Recently Viewed Products
$1.60
$1.55
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent