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Infineon OptiMOS 3 N-Channel MOSFET, 83 A, 150 V Enhancement, 3-Pin TO-220, 214 W Pd IPP111N15N3GXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | IPP111N15N3GXKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 83A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 11.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 214W |
| Typical Gate Charge Qg @ Vgs | 41nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- N-channel design enables effective and efficient switching performance.
- Low on-resistance of 11.3 milliohms reduces power loss significantly.
- High maximum power dissipation of 214 watts ensures durable operation.
- Three-pin TO-220 package with through-hole mounting for easy integration.
- Operates reliably within temperature range from -55°C to 175°C.
- Typical gate charge of 41 nanocoulombs contributes to fast switching.
- Enhancement mode channel provides stable electrical characteristics.
- Suitable for synchronous rectification and high-frequency switching.
Product Description
Infineon IPP111N15N3GXKSA1 OptiMOS 3 N-Channel MOSFET offers a maximum continuous drain current of 83 amperes and a maximum drain-source voltage of 150 volts, designed for high-efficiency switching in demanding electronics and industrial automation systems.
This enhancement mode MOSFET features a low on-resistance of 11.3 milliohms, reducing conduction losses and enhancing overall system efficiency. Its 214-watt power dissipation rating ensures the device can sustain rigorous operational loads while maintaining thermal stability over a broad temperature range from -55°C to 175°C.
The device is housed in a TO-220 package with a through-hole mount style, delivering robust mechanical stability and simplified PCB assembly. The three-pin configuration facilitates straightforward integration into existing designs.
With a typical gate charge of 41 nanocoulombs and a forward voltage drop of 1 volt, this MOSFET supports fast switching and minimized power loss, crucial for power supply circuits, synchronous rectification, converters, and inverters.
N-channel design for effective high-speed switching. Low on-resistance to minimize conduction losses. High power dissipation capability for reliable performance. Three-pin TO-220 through-hole package for easy installation.
Wide operating temperature range from -55°C up to 175°C. Suitable for automotive and industrial automation applications. Compatible with energy conversion systems including renewable energy technologies. Compact and robust design enhances durability in demanding environments.
Enhancement mode channel ensures stable operation with minimal leakage. Optimized gate charge characteristics enhance switching speed.
This Infineon MOSFET is ideal for designers seeking efficient, reliable, and versatile components for power management and high-frequency switching tasks across various industrial and commercial applications.
Explore our Electronics & Electricals category on EnvMart for more semiconductor components and power management solutions tailored to your application needs.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon OptiMOS 3 N-Channel MOSFET is 83 amperes.
This model has a maximum drain-source voltage rating of 150 volts.
It has a maximum power dissipation rating of 214 watts, allowing it to handle rigorous operational loads.
The typical gate charge for this MOSFET is 41 nanocoulombs, which contributes to its fast switching capabilities.
This MOSFET operates reliably within a temperature range from -55°C to 175°C.
The on-resistance is 11.3 milliohms, which helps reduce conduction losses significantly.
It is housed in a TO-220 package with a through-hole mount style, facilitating easy integration into designs.
This model features a three-pin configuration, which simplifies its integration into existing systems.
The forward voltage drop of this device is 1 volt.
It is suitable for synchronous rectification and high-frequency switching applications in power supply circuits, converters, and inverters.
This model features an N-channel design, which enables effective and efficient switching performance.
The maximum gate-source voltage is rated at -20 to +20 volts.
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