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Infineon OptiMOS 3 N-Channel MOSFET, 120 A, 100 V Enhancement Mode, 3-Pin TO-263 IPB027N10N3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.31mm |
| Model | IPB027N10N3GATMA1 |
| Width | 9.45mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 825-9235Brand: InfineonManufacturers Part No.: IPB027N10N3GATMA1 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 4.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 155nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Designed for high efficiency and power density applications.
- Maximum continuous drain current of 120 A for robust load handling.
- Maximum drain-source voltage of 100 V ensuring high voltage operation.
- Low on-resistance of 4.5 mΩ reduces conduction losses.
- Maximum power dissipation capacity of 300 W for reliable thermal management.
- Compact TO-263 surface mount package with 3 pins for space-saving PCB design.
- Typical gate charge of 155 nC at specified gate-source voltage for fast switching.
- Operates reliably in temperature range from -55°C to 175°C.
Product Description
Infineon's IPB027N10N3GATMA1 is an OptiMOS 3 series N-Channel MOSFET designed for industrial, automotive, and power electronics applications requiring high efficiency, compact design, and robust performance. It operates with a maximum continuous drain current of 120 A and a maximum drain-source voltage of 100 V, providing strong conduction and switching capabilities in demanding environments.
This MOSFET is housed in a 3-pin TO-263 package suitable for surface mounting, allowing optimized PCB layout and heat dissipation. Its low drain-source resistance of 4.5 mΩ minimizes conduction losses, enhancing overall efficiency and power density. The device supports a maximum power dissipation of 300 W under recommended thermal conditions, ensuring reliable operation during high-load scenarios.
Featuring an enhancement mode channel, this device operates within a gate-source voltage range of ±20 V, with a typical gate charge of 155 nC at Vgs, supporting fast switching and effective gate control. The MOSFET withstands a temperature range from -55°C to 175°C, making it suitable for harsh industrial and automotive environments.
The Infineon OptiMOS 3 series offers best-in-class performance for applications including power supply design, motor control, DC-DC converters, and power management in automotive and industrial sectors. It supports high current and voltage demands with improved power efficiency and protection.
Designed for high efficiency and power density applications. Maximum continuous drain current of 120 A for robust load handling. Maximum drain-source voltage of 100 V ensuring high voltage operation. Low on-resistance of 4.5 mΩ reduces conduction losses.
Maximum power dissipation capacity of 300 W for reliable thermal management. Compact TO-263 surface mount package with 3 pins for space-saving PCB design. Typical gate charge of 155 nC at specified gate-source voltage for fast switching.
Operates reliably in temperature range from -55°C to 175°C. Designed with enhancement mode channel for controlled conduction. Maximum gate-source voltage of ±20 V for control flexibility.
Choose Infineon OptiMOS 3 N-Channel MOSFETs for advanced semiconductor solutions in high-performance electronics, ensuring reliability and optimized power handling for industrial, automotive, and HVAC systems. Explore more in the Semiconductors category at EnvMart for complementary electronic components and power devices.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120 A, allowing for robust load handling in various applications.
This MOSFET can handle a maximum drain-source voltage of 100 V, ensuring high voltage operation in demanding environments.
The on-resistance of this model is 4.5 mΩ, which helps reduce conduction losses and enhances overall efficiency.
It is housed in a TO-263 package and has a pin count of 3, suitable for surface mounting.
The typical gate charge for this MOSFET is 155 nC at the specified gate-source voltage, supporting fast switching capabilities.
This model has a maximum power dissipation capacity of 300 W, ensuring reliable thermal management during operation.
It operates reliably within a temperature range from -55°C to 175°C, making it suitable for harsh industrial and automotive environments.
The maximum gate-source voltage for this model is ±20 V, providing flexibility in gate control.
This model is designed for applications including power supply design, motor control, DC-DC converters, and power management in automotive and industrial sectors.
The dimensions of this MOSFET are 4.57 mm in height, 10.31 mm in length, and 9.45 mm in width.
This model utilizes an N-Channel type, which is designed for enhancement mode operation.
Key features include high efficiency, low on-resistance, compact design, and robust performance suitable for industrial and automotive applications.
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