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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | IPP042N03LGXKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 70A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 79W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Infineon IPP042N03LGXKSA1 is an OptiMOS 3 N-Channel MOSFET designed for high-efficiency power switching applications. It offers a maximum continuous drain current of 70 A and supports a maximum drain-source voltage of 30 V. Packaged in a 3-pin TO-220 configuration, this device enables reliable through-hole mounting and ease of integration in diverse electronic circuits.
The OptiMOS 3 technology incorporated ensures fast switching speed and low on-resistance (6 mΩ), improving overall energy efficiency and power density, particularly useful in switch mode power supplies (SMPS) and DC/DC converters. The MOSFET is operated in enhancement mode with a gate-source voltage rating of -20 to +20 V, allowing for robust gate control under varied electrical conditions.
With a maximum power dissipation rating of 79 W and an operating temperature range from -55°C to 175°C, this MOSFET is suitable for durable and demanding industrial and electronic applications. The typical gate charge of 18 nC supports efficient switching performance, yielding enhanced operational reliability.
Its compact physical dimensions (15.95 mm height, 10.36 mm length, 4.57 mm width) facilitate integration into space-constrained board designs. Although it lacks specific automotive certifications, it serves well in industrial, computing, and power management scenarios.
OptiMOS 3 technology enables high performance and energy efficiency. Enhancement mode N-channel with low on-resistance of 6 milliohms. Fast switching suitable for power supply and converter applications. High power dissipation and wide operating temperature range.
Standard through-hole mounting in 3-pin TO-220 package. Gate-source voltage range supports flexible gate drive schemes. Compact size for versatile PCB layout options. Reliable technology for industrial, computing, and power electronics.
This MOSFET is an ideal solution for engineers and designers focusing on power efficiency and reliability in electronic device manufacturing, industrial automation, and energy management systems. Explore more Infineon semiconductor components and accessories on EnvMart for comprehensive electronic solutions and reliable procurement.
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