Infineon Isolated OptiMOS P Type P-Channel MOSFET, 2 A Continuous Drain Current, 30 V Drain Source BSL308PEH6327XTSA1

Infineon BSL308PEH6327XTSA1 Isolated OptiMOS P series MOSFET is a high-quality P-channel enhancement transistor designed for surface-mount applications in automotive and industrial electronics. It supports a maximum continuous drain current of 2 A and a maximum drain-source voltage of 30 V, making it suitable for 30 V system use. The compact TSOP 6-pin package minimizes board footprint while simplifying thermal and signal routing.

This device features two isolated transistor elements on a single chip, facilitating dual-channel switching or polarity protection circuits in space-constrained assemblies. Its low drain-source resistance of 130 milliohms ensures reduced conduction losses, while the typical gate charge of -5 nC at gate voltage accelerates switching speed, improving overall efficiency.

Designed for high-temperature operation, it functions reliably between -55°C and 150°C, meeting demanding automotive requirements with AEC-Q101 qualification. The MOSFET supports power dissipation up to 500 mW, providing robust thermal handling for compact power distribution boards.

Low on-resistance of 130 milliohms reduces conduction losses. Maximum drain-source voltage of 30 V enables 30 V system applications. Continuous drain current of 2 A supports moderate load switching. Dual P-channel elements per chip allow simplified dual-channel layouts.

Typical gate charge -5 nC at Vgs for faster switching response. Power dissipation rating of 500 mW supports reliable thermal handling. AEC-Q101 qualification ensures automotive-grade stress performance.

This MOSFET is ideal for automotive power switches, battery management load-switching, DC-DC converter applications that require P-channel devices, and compact surface-mount power distribution systems. Its isolated transistor configuration and compact dimensions (2.9 mm length, 1.6 mm width, 1 mm height) make it suitable for space-optimized circuit designs.

For operational safety, the gate-to-source voltage must not exceed ±20 V to avoid device stress. The TSOP 6-pin surface mount package supports efficient placement and routing on printed circuit boards. This device delivers dependable performance in industrial, automotive, and electronic component applications requiring robust, compact P-channel MOSFET solutions.