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Toshiba PNP Power Transistor 15 A, 230 V, 3-Pin TO-3P 2SA1943N(S1,E,S)

Category Power Transistors Brand Toshiba Condition New

Specifications

Country of Origin China
Brand Toshiba
Height 40.5mm
Length 15.5mm
Model 2SA1943N(S1,E,S)
Width 4.5mm
Mount Type Through Hole
Series 2SA1943
Maximum Operating Temperature 150°C
Package Type TO-3P
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -230V
Minimum DC Current Gain hFE 35
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -230V
Maximum Power Dissipation Pd 150W
Maximum DC Collector Current Idc -15A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz
Toshiba 2SA1943-O(Q) Transistor, -15 A PNP, -230 V, 3-Pin TO-3PLBrand Toshiba

Key Features

  • This transistor features a three-pin TO-3P package for through-hole mounting.
  • It offers a maximum power dissipation of 150 W, suitable for industrial power amplification.
  • The device supports a maximum transition frequency of 30 MHz ensuring efficient switching.
  • Operating temperature range spans from -55°C to 150°C for reliable performance under diverse conditions.
  • The transistor polarity is PNP, commonly used in power supply and amplifier circuits.
  • The minimum DC current gain (hFE) is 35, supporting strong amplification.
  • Its compact dimensions of 15.5 mm length, 4.5 mm width, and 40.5 mm height ensure ease of integration.
  • Manufactured in China, the transistor conforms to basic industrial standards.

Product Description

Toshiba 2SA1943N(S1,E,S) is a high-power PNP transistor engineered for demanding electronic and electrical applications. Operating with a collector current up to 15 A and collector-emitter voltage rating of 230 V, it is ideal for power amplifier and switching uses in industrial environments.

The transistor is housed in a durable TO-3P package featuring three pins configured for through-hole mounting, facilitating robust mechanical and electrical connections. It offers a significant power dissipation capacity of 150 W and a maximum transition frequency of 30 MHz, enabling high-speed and efficient operation in power circuits.

Designed to operate reliably across a wide temperature range from -55°C to 150°C, this transistor is suited for harsh industrial, laboratory, and manufacturing conditions where thermal management is critical.

With a PNP polarity and a minimum DC current gain of 35, it supports effective amplification and switching functions commonly required in power supplies and audio amplifiers. The precise physical dimensions of 15.5 mm length, 4.5 mm width, and 40.5 mm height ensure compatibility with existing PCB layouts and standard mounting hardware.

Manufactured in China under Toshiba's quality standards, this component serves the semiconductor market segment for power transistors used in electronics and electrical systems. This transistor features a three-pin TO-3P package for through-hole mounting.

It offers a maximum power dissipation of 150 W, suitable for industrial power amplification. The device supports a maximum transition frequency of 30 MHz ensuring efficient switching. Operating temperature range spans from -55°C to 150°C for reliable performance under diverse conditions.

The transistor polarity is PNP, commonly used in power supply and amplifier circuits. The minimum DC current gain (hFE) is 35, supporting strong amplification. Its compact dimensions of 15.5 mm length, 4.5 mm width, and 40.5 mm height ensure ease of integration.

Manufactured in China, the transistor conforms to basic industrial standards.

Part of Toshiba’s series 2SA1943 bipolar power transistors, this component is widely used in industrial, manufacturing, and laboratory equipment needing reliable power switching and amplification. It is suitable for applications requiring high current handling and thermal stability.

EnvMart’s catalog offers this transistor in new condition, providing quality assurance for electronics professionals seeking high-performance Power Transistors.

Toshiba PNP Power Transistor 15 A, 230 V, 3-Pin TO-3P 2SA1943N(S1,E,S)
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Frequently Asked Questions

The maximum DC collector current for this model is -15 A, making it suitable for high-current applications.

This transistor has a maximum power dissipation of 150 W, which is ideal for industrial power amplification.

The operating temperature range for this unit spans from -55°C to 150°C, ensuring reliable performance in various conditions.

It is housed in a TO-3P package, designed for through-hole mounting, which facilitates robust connections.

The maximum transition frequency for this model is 30 MHz, allowing for efficient switching capabilities.

The minimum DC current gain (hFE) for this transistor is 35, supporting effective amplification.

This model measures 15.5 mm in length, 4.5 mm in width, and 40.5 mm in height, ensuring compatibility with standard layouts.

The collector-emitter voltage rating for this unit is -230 V, suitable for high-voltage applications.

This transistor features a PNP polarity, commonly utilized in power supply and amplifier circuits.

The maximum emitter-base voltage (VEBO) for this model is -5 V, which is essential for its operation.

The maximum collector-base voltage (VCBO) rating for this transistor is -230 V, allowing it to handle substantial voltage levels.

This transistor is suitable for applications requiring high current handling and thermal stability, such as power amplifiers and switching circuits.

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