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| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 40.5mm |
| Length | 15.5mm |
| Model | 2SA1943N(S1,E,S) |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | 2SA1943 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3P |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -230V |
| Minimum DC Current Gain hFE | 35 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -230V |
| Maximum Power Dissipation Pd | 150W |
| Maximum DC Collector Current Idc | -15A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 30MHz |
| Toshiba 2SA1943-O(Q) Transistor, -15 A PNP, -230 V, 3-Pin TO-3PLBrand | Toshiba |
Toshiba 2SA1943N(S1,E,S) is a high-power PNP transistor engineered for demanding electronic and electrical applications. Operating with a collector current up to 15 A and collector-emitter voltage rating of 230 V, it is ideal for power amplifier and switching uses in industrial environments.
The transistor is housed in a durable TO-3P package featuring three pins configured for through-hole mounting, facilitating robust mechanical and electrical connections. It offers a significant power dissipation capacity of 150 W and a maximum transition frequency of 30 MHz, enabling high-speed and efficient operation in power circuits.
Designed to operate reliably across a wide temperature range from -55°C to 150°C, this transistor is suited for harsh industrial, laboratory, and manufacturing conditions where thermal management is critical.
With a PNP polarity and a minimum DC current gain of 35, it supports effective amplification and switching functions commonly required in power supplies and audio amplifiers. The precise physical dimensions of 15.5 mm length, 4.5 mm width, and 40.5 mm height ensure compatibility with existing PCB layouts and standard mounting hardware.
Manufactured in China under Toshiba's quality standards, this component serves the semiconductor market segment for power transistors used in electronics and electrical systems. This transistor features a three-pin TO-3P package for through-hole mounting.
It offers a maximum power dissipation of 150 W, suitable for industrial power amplification. The device supports a maximum transition frequency of 30 MHz ensuring efficient switching. Operating temperature range spans from -55°C to 150°C for reliable performance under diverse conditions.
The transistor polarity is PNP, commonly used in power supply and amplifier circuits. The minimum DC current gain (hFE) is 35, supporting strong amplification. Its compact dimensions of 15.5 mm length, 4.5 mm width, and 40.5 mm height ensure ease of integration.
Manufactured in China, the transistor conforms to basic industrial standards.
Part of Toshiba’s series 2SA1943 bipolar power transistors, this component is widely used in industrial, manufacturing, and laboratory equipment needing reliable power switching and amplification. It is suitable for applications requiring high current handling and thermal stability.
EnvMart’s catalog offers this transistor in new condition, providing quality assurance for electronics professionals seeking high-performance Power Transistors.
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