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STMicroelectronics N-Channel Power MOSFET, 15 A, 600 V, Enhancement Mode, 5-Pin PowerFLAT STL26N60DM6

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin China
Brand STMicroelectronics
Height 900μm
Length 8.1mm
Model STL26N60DM6
Width 8.1mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type PowerFLAT
Minimum Operating Temperature -55°C
Pin Count 5
Channel Type N
Maximum Continuous Drain Current Id 15A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 215mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 110W
Typical Gate Charge Qg @ Vgs 24nC
Maximum Gate Source Voltage Vgs 25V
Forward Voltage Vf 1.6V

Key Features

  • Supports a maximum continuous drain current of 15 A for demanding applications.
  • Features a maximum drain-source voltage of 600 V suitable for high-voltage systems.
  • Incorporates a fast-recovery body diode enhancing efficiency in switching circuits.
  • Low gate charge and input capacitance reduces switching losses.
  • Surface mount package with 5-pin PowerFLAT design for compact PCB layouts.
  • Operates reliably from -55°C up to 150°C ensuring broad temperature tolerance.
  • Maximum power dissipation of 110 W enables handling of significant power loads.
  • Extremely high dv/dt ruggedness and Zener-protected gate for improved robustness.

Product Description

STMicroelectronics STL26N60DM6 is a high-voltage N-channel power MOSFET designed for industrial, automotive, and power management applications requiring efficient switching performance. This enhancement mode device operates at a maximum drain current of 15 A and withstands voltages up to 600 V, packaged in a compact 5-pin PowerFLAT surface mount package.

The MOSFET belongs to the MDmesh™ DM6 series, featuring significantly improved RDS(on) per area, reduced recovery charge (Qrr), and swift recovery times (trr), which are critical for high-efficiency bridge topologies and zero-voltage switching (ZVS) phase-shift converters. Its fast-recovery body diode and low gate charge contribute to minimizing switching losses and enhancing overall power efficiency.

Key characteristics include an extremely rugged gate with Zener protection, allowing it to handle high dv/dt conditions safely. Operating temperature ranges from -55°C to 150°C, making it suitable for demanding environmental conditions. With a power dissipation capacity of 110 W, it can reliably manage significant power loads in industrial power supplies, motor controls, and automotive systems.

The device's surface mount PowerFLAT package offers a compact footprint for PCB space optimization and facilitates easy integration in automated manufacturing. Maximum continuous drain current: 15 A. Maximum drain-source voltage: 600 V.

Low on-resistance (RDS(on)) of 215 mΩ for efficiency. Maximum gate-source voltage up to 25 V with typical gate charge of 24 nC. Forward voltage drop of 1.6 V typical. Power dissipation capacity of 110 W. Operating temperature: -55°C to 150°C.

5-pin PowerFLAT surface mount package.

This component is widely applicable in industrial automation, power conversion equipment, HVAC systems, and automotive electronics where high voltage handling, reliable switching performance, and thermal tolerance are essential. The STL26N60DM6 balances performance, durability, and efficiency within a small surface-mount footprint.

Explore the Power MOSFET category at EnvMart for compatible components and related power semiconductor devices tailored for industrial and commercial applications.

STMicroelectronics N-Channel Power MOSFET, 15 A, 600 V, Enhancement Mode, 5-Pin PowerFLAT STL26N60DM6
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Frequently Asked Questions

The maximum continuous drain current for this model is 15 A.

It can withstand a maximum drain-source voltage of 600 V.

This MOSFET operates reliably within a temperature range of -55°C to 150°C.

It comes in a 5-pin PowerFLAT surface mount package.

The maximum power dissipation capacity of this model is 110 W.

The typical gate charge at Vgs is 24 nC.

The typical forward voltage drop is 1.6 V.

It has a maximum on-resistance (RDS(on)) of 215 mΩ.

This model is widely applicable in industrial automation, power conversion equipment, HVAC systems, and automotive electronics.

It features an N-channel type.

The maximum gate-source voltage is 25 V.

The height and width of this model are both 8.1 mm.

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