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STMicroelectronics STripFET Type P-Channel MOSFET, 3A, 60V, Enhancement Mode, 4-Pin SOT-223 STN3P6F6
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | STN3P6F6 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 160mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.6W |
| Typical Gate Charge Qg @ Vgs | 6.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Key Features
- Operates in enhancement mode for precise switching control.
- Features ultra-low gate charge of 6.4nC at Vgs for efficient switching.
- Handles maximum power dissipation of 2.6 watts under normal thermal conditions.
- Supports wide operating temperature range from -55°C to 175°C.
- Maximum drain-source resistance of 160 milliohms ensures low conduction losses.
- Designed for surface mount applications with 4 pins for improved PCB integration.
- Maximum gate-source voltage rating ±20V protects against voltage spikes.
- Forward voltage drop of -1.1V typical for optimized conduction performance.
Product Description
STMicroelectronics STN3P6F6 STripFET™ Type P-Channel MOSFET is a high-performance power transistor designed for switching and amplification uses in electronic circuits. It supports a continuous drain current of 3A with a maximum drain-source voltage of 60V. Housed in a compact 4-pin SOT-223 package, it is suitable for surface mount PCB assembly.
This MOSFET operates in enhancement mode, providing efficient switching with a low gate charge of 6.4nC at the gate-source voltage. It features a maximum drain-source resistance of 160 milliohms, reducing conduction losses and improving power efficiency. The device is rated for maximum power dissipation of 2.6 watts and operates reliably across a broad temperature range from -55°C to 175°C, making it suitable for demanding industrial, automotive, and power management applications.
The SOT-223 package dimensions (6.7mm length, 3.7mm width, 1.8mm height) enable compact circuit designs while maintaining thermal management effectiveness. The maximum gate-source voltage rating of ±20V safeguards the transistor from voltage transients. The typical forward voltage drop of -1.1V ensures optimized conduction for energy-sensitive applications.
Operates in enhancement mode with ultra-low gate charge for efficient power control. Compact SOT-223 4-pin package offers easy PCB mounting and thermal handling. Robust continuous drain current rating of 3 amperes at 60 volts drain-to-source voltage.
Wide operating temperature range from -55°C to 175°C for harsh environments. Low drain-source resistance minimizes power loss and heat generation. Maximum power dissipation of 2.6 watts supports medium power applications.
Withstands maximum gate-source voltage of ±20 volts for voltage spike protection. Specified forward voltage drop ensures low conduction voltage loss. Manufactured in China with adherence to industrial quality standards. Explore the broad range of Power MOSFETs available at EnvMart for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3A.
This MOSFET has a maximum drain-source voltage rating of 60V.
The typical gate charge at Vgs for this unit is 6.4nC.
It supports a maximum power dissipation of 2.6 watts under normal thermal conditions.
The typical forward voltage drop for this model is -1.1V.
The maximum gate-source voltage rating is ±20V, which protects against voltage spikes.
The SOT-223 package dimensions are 6.7mm in length, 3.7mm in width, and 1.8mm in height.
It operates reliably across a wide temperature range from -55°C to 175°C.
This model features a 4-pin configuration for improved PCB integration.
This device is a Type P-channel MOSFET, designed for enhancement mode operation.
The maximum drain-source resistance for this model is 160 milliohms, ensuring low conduction losses.
It is designed for surface mount applications, suitable for PCB assembly.
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