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onsemi N-Channel Power MOSFET 30 V, 69 A, Enhancement Mode, 8-Pin SO-8FL Package NTMFS4C06NT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 6.1mm |
| Model | NTMFS4C06NT1G |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | NTMFS4C06N |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8FL |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 69A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30.5W |
| Typical Gate Charge Qg @ Vgs | 26nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
Key Features
- An N-channel MOSFET with a maximum continuous drain current of 69 A.
- Maximum drain-source voltage rating of 30 V ensures suitability for medium voltage applications.
- Uses enhancement mode channel for efficient control and low power loss.
- Low maximum drain-source resistance of 6 mΩ reduces conduction losses.
- Rated maximum power dissipation of 30.5 W for thermal reliability under load.
- Stable operation over a wide temperature range from -55°C to 150°C.
- Compact SO-8FL package with 8 pins allows for surface mounting in dense circuits.
- Typical gate charge of 26 nC supports fast switching capabilities.
Product Description
onsemi NTMFS4C06NT1G is a high-performance N-channel power MOSFET designed for applications requiring efficient switching of medium currents up to 69 A and voltages up to 30 V. Packaged in an 8-pin SO-8FL surface mount chassis, this device offers compact size and robust electrical characteristics for use in various industrial and electronic systems.
This transistor features an enhancement mode channel, delivering low on-resistance of 6 milliohms to minimize conduction losses and improve system efficiency. Its typical gate charge of 26 nC enables rapid switching response, ideal for power management circuits.
The MOSFET supports a broad operating temperature range from -55°C to 150°C, ensuring reliable performance in harsh industrial, automotive, and commercial environments. The device allows a maximum gate-source voltage of ±20 V, protecting the gate drive circuitry from voltage spikes. The forward voltage drop of 0.8 V reduces power dissipation during operation.
With a maximum power dissipation rating of 30.5 W, the NTMFS4C06NT1G is suited for demanding power switching roles including motor control, DC-DC converters, power supplies, and load switches in embedded systems.
The compact SO-8FL footprint with 8 pins facilitates dense PCB layouts, making it ideal for modern surface mount manufacturing processes. While there are no formal industry or automotive standards listed, the robust electrical and thermal ratings make it suitable for a wide range of power electronics applications.
An N-channel MOSFET with a maximum continuous drain current of 69 A. Maximum drain-source voltage rating of 30 V ensures suitability for medium voltage applications. Uses enhancement mode channel for efficient control and low power loss.
Low maximum drain-source resistance of 6 mΩ reduces conduction losses. Rated maximum power dissipation of 30.5 W for thermal reliability under load. Stable operation over a wide temperature range from -55°C to 150°C. Compact SO-8FL package with 8 pins allows for surface mounting in dense circuits.
Typical gate charge of 26 nC supports fast switching capabilities. Maximum gate-source voltage tolerance of ±20 V safeguards gate integrity. Forward voltage drop of 0.8 V enhances operational efficiency.
This NTMFS4C06NT1G MOSFET is a solid choice for engineers in industrial automation, power supply design, automotive electronics, and consumer appliances looking for a reliable and efficient power switching transistor. Explore additional semiconductor components and Power MOSFETs in the Electronics & Electricals category on EnvMart to complete your design needs.
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Frequently Asked Questions
The maximum continuous drain current for the NTMFS4C06NT1G is 69 A.
This model has a maximum drain-source voltage rating of 30 V, making it suitable for medium voltage applications.
The rated maximum power dissipation for the NTMFS4C06NT1G is 30.5 W, ensuring thermal reliability under load.
It has a typical gate charge of 26 nC, which supports fast switching capabilities.
The NTMFS4C06NT1G is packaged in an SO-8FL type with 8 pins, suitable for surface mounting.
The maximum gate-source voltage tolerance for this MOSFET is ±20 V, which helps protect the gate drive circuitry.
The dimensions of the NTMFS4C06NT1G are 6.1 mm in length, 5.1 mm in width, and 1.05 mm in height.
This model operates over a wide temperature range from -55°C to 150°C, ensuring reliable performance in various environments.
The maximum drain-source resistance for the NTMFS4C06NT1G is 6 mΩ, which reduces conduction losses.
This model is suitable for applications such as motor control, DC-DC converters, power supplies, and load switches in embedded systems.
The forward voltage drop for the NTMFS4C06NT1G is 0.8 V, which enhances operational efficiency during use.
The NTMFS4C06NT1G uses an N-channel type with enhancement mode for efficient control.
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