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onsemi N-Channel MOSFET, 20 A, 650 V Enhancement Mode, 3-Pin TO-247 Package NTHL190N65S3HF
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | NTHL190N65S3HF |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | NTHL |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 162W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.3V |
Key Features
- Capable of handling a maximum continuous drain current of 20 amperes.
- Maximum drain-source voltage rating of 650 volts ensures high voltage tolerance.
- TO-247 package with 3 pins for through-hole mounting.
- Low on-resistance of 190 milliohms minimizes conduction losses.
- Maximum power dissipation up to 162 watts for robust operation.
- Operating temperature range from -55°C to 150°C supports diverse environments.
- Low typical gate charge of 34 nanocoulombs for efficient switching.
- Forward voltage of 1.3 volts for efficient conduction.
Product Description
onsemi NTHL190N65S3HF N-Channel MOSFET is a power semiconductor device packaged in a TO-247 encapsulation with 3 pins suitable for through-hole mounting. This enhancement mode MOSFET features a maximum continuous drain current of 20 amperes and a drain-source voltage rating of 650 volts, making it suitable for high voltage and power applications.
Manufactured using onsemi's advanced super-junction technology, it offers ultra-low gate charge and low on-resistance to minimize conduction and switching losses. The MOSFET also achieves optimized reverse recovery characteristics of the body diode which improves overall system reliability and reduces additional component count.
This MOSFET delivers a maximum power dissipation of 162 watts and can operate reliably within a wide temperature range from -55°C to 150°C. Its typical gate charge of 34 nanocoulombs and forward voltage drop of 1.3 volts contribute to higher efficiency in switching circuits.
The device is widely applicable in telecommunications, industrial power systems, server power supplies, electric vehicle chargers, solar inverters, and uninterrupted power supplies (UPS). Its low conduction loss and efficient switching characteristics support miniaturization and higher system efficiency in power electronics.
Maximum continuous drain current of 20 A. Drain-source voltage of 650 V for high voltage tolerance. Package type TO-247 with 3-pin configuration. Low on-resistance (Rds(on)) of 190 mΩ, reducing energy loss. Maximum power dissipation capacity of 162 W.
Minimum operating temperature of -55°C and maximum of 150°C. Typical gate charge of 34 nC for efficient switching performance. Forward voltage of 1.3 V supporting conduction efficiency. Utilizes charge balance super-junction technology for improved performance.
Enhanced body diode robustness for higher system reliability.
This high-performance MOSFET is ideal for industrial, telecommunications, cloud systems, electric vehicle charging, and solar power systems. Discover more high-quality MOSFETs and power semiconductor devices at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 amperes.
It has a maximum drain-source voltage rating of 650 volts, ensuring high voltage tolerance.
This MOSFET is packaged in a TO-247 configuration with 3 pins for through-hole mounting.
The on-resistance (Rds(on)) is 190 milliohms, which helps minimize conduction losses.
It can handle a maximum power dissipation of 162 watts for robust operation.
The operating temperature range for this device is from -55°C to 150°C.
The typical gate charge is 34 nanocoulombs, contributing to efficient switching performance.
The forward voltage drop is 1.3 volts, supporting conduction efficiency.
The dimensions are 20.82 mm in height, 15.87 mm in length, and 4.82 mm in width.
The maximum gate-source voltage for this model is 30 volts.
It is widely applicable in telecommunications, industrial power systems, server power supplies, electric vehicle chargers, solar inverters, and uninterrupted power supplies (UPS).
This model utilizes charge balance super-junction technology for improved performance and efficiency.
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