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onsemi N-Channel MOSFET, 75 A, 650 V Enhancement, 3-Pin TO-247 Package NTHL027N65S3HF
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | NTHL027N65S3HF |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | NTHL |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 27.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 595W |
| Typical Gate Charge Qg @ Vgs | 225nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 75 amperes allows high power handling.
- Low drain-source resistance of 27.4 milliohms reduces conduction losses.
- Enhanced device reliability with maximum operating temperature of 150 degrees Celsius.
- Typical gate charge of 225 nanocoulombs enables efficient switching performance.
- Package is a through-hole TO-247 variant with 3 pins for ease of mounting.
- Supports forward voltage of 1.3 volts across the device.
- Robust minimum operating temperature down to minus 55 degrees Celsius for extended environmental range.
- Designed using charge balance technology for superior low on-resistance and switching speed.
Product Description
onsemi NTHL027N65S3HF is an advanced high-voltage N-Channel MOSFET provided in a 3-pin TO-247 through-hole package. It supports continuous drain currents up to 75 A and can handle maximum drain-source voltages of 650 V, optimized for power switching and control applications.
Engineered using charge balance super-junction technology, this MOSFET achieves outstanding low on-resistance (27.4 mΩ) and lower gate charge (225 nC), minimizing conduction losses and enabling superior switching efficiency. The device operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for demanding environments.
Featuring enhancement mode channel operation and a maximum power dissipation rating of 595 W, it provides robust performance for various industrial and electronic applications. The 3-pin TO-247 package facilitates through-hole mounting and efficient heat dissipation.
The typical forward voltage drop of 1.3 V and maximum gate-source voltage of 30 V ensure stable and efficient device operation. Its optimized reverse recovery behavior of the body diode enhances system reliability by reducing additional component requirements.
This MOSFET is ideal for use in industrial power management systems, motor drives, power supplies, renewable energy inverters, and other high-performance electronic designs requiring miniaturization and enhanced energy efficiency.
Maximum continuous drain current: 75 A. Maximum drain-source voltage: 650 V. Drain-source resistance (Rds(on)): 27.4 mΩ. Typical gate charge (Qg): 225 nC. Maximum power dissipation: 595 W. Operating temperature range: -55°C to 150°C.
Package: 3-pin TO-247 through-hole. Forward voltage: 1.3 V. Channel mode: Enhancement. Designed for high efficiency and miniaturization. Explore more on MOSFET solutions with onsemi products at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 75 A.
This MOSFET can handle a maximum drain-source voltage of 650 V.
The drain-source resistance (Rds(on)) of this unit is 27.4 mΩ.
The typical gate charge (Qg) for this model is 225 nC.
It operates reliably across a temperature range from -55°C to 150°C.
This model is provided in a 3-pin TO-247 through-hole package.
The maximum power dissipation rating is 595 W.
The maximum gate-source voltage (Vgs) is 30 V.
The typical forward voltage drop across the device is 1.3 V.
The height of this model is 20.82 mm and the width is 4.82 mm.
This device is suitable for industrial power management systems, motor drives, and renewable energy inverters among other high-performance electronic designs.
It is engineered using charge balance super-junction technology for low on-resistance and efficient switching performance.
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