STMicroelectronics N-Channel Power MOSFET, 80 A Continuous Drain Current, 55 V Drain Source Voltage STB80NF55-06T4

STMicroelectronics STB80NF55-06T4 is a high-performance N-Channel Power MOSFET designed for switching and power management applications. It delivers a continuous drain current of 80 amperes and supports a maximum drain source voltage of 55 volts. Packaged in a compact 3-pin TO-263 surface mount package, this device is suitable for efficient incorporation into electronic circuits requiring robust power handling.

The enhancement mode channel design ensures effective switching capability suitable for industrial, automotive (non-automotive certified), and commercial electronic uses. Notable features include a low drain-source resistance of 6.5 milliohms minimizing power losses and a high maximum power dissipation of 300 watts allowing operation under demanding thermal loads.

Operating temperature specifications from -55°C up to 175°C enable reliable performance in various thermal environments. Typical gate charge of 142 nC facilitates fast switching speeds, and the maximum gate-source voltage of 20 V supports a broad range of gate drive voltages.

Physical dimensions of approximately 10.4 mm in length, 9.35 mm in width, and 4.37 mm in height make it suitable for compact PCB layouts. The MOSFET is manufactured using STMicroelectronics' advanced Single Feature Size™ strip-based process technology which ensures excellent reproducibility and rugged avalanche characteristics.

This device finds application in industrial power supplies, motor drives, DC-DC converters, and other switching power electronic systems requiring efficient and reliable N-channel MOSFETs.

The MOSFET supports high continuous drain current of 80 amperes for robust performance. Drain source voltage rating is 55 volts suitable for medium power electronic circuits. The device employs enhancement mode channel operation optimized for switching applications.

Compact TO-263 surface mount package with 3 pins for easy PCB integration. Low on-resistance of 6.5 milliohms ensures efficient power handling and minimal losses. High maximum power dissipation rating of 300 watts supports demanding operating conditions.

Operational temperature range from -55°C to 175°C supports harsh industrial environments. Typical gate charge of 142 nanocoulombs ensures swift switching performance. Maximum gate to source voltage rated at 20 volts for gate drive compatibility.

Dimensions approximately 10.4 mm length, 9.35 mm width, and 4.37 mm height for compact design.

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