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Vishay Dual TrenchFET 2 N-Channel MOSFET 60 A 40 V Enhancement 8-Pin SO-8 SQJ208EP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.01mm |
| Length | 5mm |
| Model | SQJ208EP-T1_GE3 |
| Width | 4.47mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 16mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.77V |
| Transistor Configuration | Dual |
Key Features
- This MOSFET features a trenchFET series and enhancement channel mode.
- Maximum drain-source resistance is 16 milliohms ensuring efficient current conduction.
- Operates at a maximum power dissipation of 48 watts for robust performance.
- Supports a typical gate charge of 22 nanocoulombs at gate-source voltage.
- Compatible with automotive standards including AEC-Q101 for reliability.
- Compact dimensions with height 1.01 mm, length 5 mm, and width 4.47 mm.
- Designed for surface mount applications with 8-pin SO-8 package format.
- Temperature range from -55°C to 175°C enables use in harsh environments.
Product Description
Vishay SQJ208EP-T1_GE3 Dual TrenchFET 2 N-Channel MOSFET offers a robust 60 ampere maximum continuous drain current and 40 volt maximum drain to source voltage in a compact SO-8 8-pin surface mount package. It features an enhancement channel mode suitable for a wide range of industrial and automotive electronic applications.
Manufactured with trenchFET technology, this dual transistor device provides a low drain-source resistance of 16 milliohms which contributes to high efficiency and low heat generation during operation. The device supports a maximum power dissipation of 48 watts, enabling reliable performance under demanding conditions.
The MOSFET operates over an extensive temperature range from -55°C up to 175°C making it ideal for automotive electronics and industrial power management systems requiring high durability. The typical gate charge is 22 nanocoulombs, ensuring fast switching and reduced power loss.
The device complies with automotive standard AEC-Q101, ensuring quality assurance for automotive systems. It is designed for surface mount assembly with precise dimensions: height of 1.01 mm, length of 5 mm, and width of 4.47 mm.
This dual element transistor configuration improves switching performance and offers enhanced control in power electronics circuits. The SQJ208EP-T1_GE3 MOSFET is suited for applications including power supply design, motor control, and other semiconductor switching scenarios typical in industrial, automotive, and electronic manufacturing environments.
This MOSFET features a trenchFET series and enhancement channel mode. Maximum drain-source resistance is 16 milliohms ensuring efficient current conduction. Operates at a maximum power dissipation of 48 watts for robust performance.
Supports a typical gate charge of 22 nanocoulombs at gate-source voltage. Compatible with automotive standards including AEC-Q101 for reliability. Compact dimensions with height 1.01 mm, length 5 mm, and width 4.47 mm. Designed for surface mount applications with 8-pin SO-8 package format.
Temperature range from -55°C to 175°C enables use in harsh environments. Dual transistor configuration with 2 elements per chip enhances switching capability. Explore more Vishay MOSFETs for your industrial, automotive, and power management needs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the SQJ208EP-T1_GE3 is 60 amperes.
This model has a maximum drain-source voltage rating of 40 volts.
The maximum drain-source resistance is 16 milliohms, ensuring efficient current conduction.
It operates at a maximum power dissipation of 48 watts, suitable for robust performance.
The typical gate charge at gate-source voltage is 22 nanocoulombs.
This MOSFET has a height of 1.01 mm, length of 5 mm, and width of 4.47 mm.
The operating temperature range is from -55°C to 175°C, making it suitable for harsh environments.
It is designed in an 8-pin SO-8 package format for surface mount applications.
The device complies with the AEC-Q101 automotive standard, ensuring reliability for automotive applications.
This MOSFET features a dual transistor configuration with 2 elements per chip.
It uses an N-channel type, suitable for enhancement mode applications.
The maximum gate-source voltage is 20 volts.
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