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Vishay Dual TrenchFET N-Channel MOSFET 20 V 850 mA Surface Mount 6-Pin SOT-363 SQ1922AEEH-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 2.2mm |
| Model | SQ1922AEEH-T1_GE3 |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-363 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 850mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 530mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 0.9nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Dual |
Key Features
- Automotive grade MOSFET compliant with AEC-Q101 standard.
- Dual transistor configuration enhances switching performance.
- Surface mount device with small form factor dimensions of 2.2 mm length and 1.35 mm width.
- High maximum operating temperature of up to 175°C supports harsh environments.
- Low maximum drain-source resistance of 530 mΩ ensures efficient conduction.
- Typical gate charge of 0.9 nC enables fast switching.
- Operating temperature range from -55°C to 175°C ensures wide usability.
- Forward voltage is 0.8 V with maximum gate-source voltage of 12 V.
Product Description
Vishay SQ1922AEEH-T1_GE3 is a Dual TrenchFET N-Channel MOSFET designed for automotive and industrial applications requiring reliable and efficient switching performance. Its dual transistor configuration packaged in a compact 6-pin SOT-363 surface mount package measures 2.2 mm by 1.35 mm by 1 mm, allowing for dense PCB layouts.
With a maximum continuous drain current of 850 mA and a maximum drain-source voltage of 20 V, this MOSFET is optimized for low voltage power switching tasks. The device operates over a wide temperature range from -55°C up to 175°C, meeting rigorous automotive standards (AEC-Q101), ensuring durability under harsh operational conditions.
The enhancement mode device features a low maximum drain-source resistance of 530 mΩ which minimizes conduction losses. Its typical gate charge at Vgs is 0.9 nC facilitating rapid switching speeds, critical in high-frequency power management circuits. Maximum power dissipation is rated at 1.5 W, suitable for controlling loads within moderate power envelopes.
This MOSFET is widely used in automotive electronics, industrial controls, and general electronic equipment requiring efficient and robust N-channel MOSFETs. The device’s surface mount package enables ease of assembly using automated production methods.
Automotive qualified with AEC-Q101 certification supporting high reliability requirements. Small footprint maximizes PCB space savings in dense circuit assemblies. Wide operating temperature range and robust electrical characteristics support diverse industrial applications.
Low gate charge and low on-resistance reduce switching and conduction losses improving overall system efficiency. Compact surface mount design facilitates mass manufacturing and integration into complex electronic assemblies.
Choose Vishay’s SQ1922AEEH-T1_GE3 MOSFET for reliable performance in demanding automotive and industrial applications. Explore more from Vishay and other semiconductor products suitable for electronics manufacturing at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SQ1922AEEH-T1_GE3 MOSFET is 850 mA.
This MOSFET can handle a maximum drain-source voltage of 20 V.
The operating temperature range for this model is from -55°C to 175°C.
The typical gate charge at Vgs for this MOSFET is 0.9 nC.
The maximum power dissipation for the Vishay SQ1922AEEH-T1_GE3 is rated at 1.5 W.
This surface mount MOSFET has dimensions of 2.2 mm in length, 1.35 mm in width, and 1 mm in height.
The maximum gate-source voltage for this MOSFET is 12 V.
The maximum drain-source resistance is 530 mΩ.
Yes, this model is compliant with the AEC-Q101 automotive standard.
The Vishay SQ1922AEEH-T1_GE3 uses a dual transistor configuration.
This MOSFET is suitable for automotive electronics, industrial controls, and general electronic equipment requiring efficient switching performance.
The channel type of this MOSFET is N-channel.
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