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onsemi PowerTrench Type P-Channel MOSFET, 800 mA, 150 V Enhancement, 3-Pin SOT-23 FDN86265P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.94mm |
| Length | 2.92mm |
| Model | FDN86265P |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 800mA |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 2.2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 2.9nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1.3V |
Key Features
- Low gate charge allows efficient switching performance.
- Surface-mount SOT-23 package suitable for compact PCB designs.
- Enhancement mode operation ensures fast response.
- Supports maximum drain-source voltage of 150 V for high voltage applications.
- Maximum power dissipation is 1.5 W, enabling steady operation under load.
- Typical gate charge of 2.9 nC reduces switching losses.
- Wide operating temperature range from -55°C to 150°C for demanding environments.
- Includes a shielded-gate structure to provide excellent charge balance and switching efficiency.
Product Description
onsemi FDN86265P is a PowerTrench type P-Channel MOSFET designed for efficient power switching applications. It is rated for a maximum continuous drain current of 800 mA and maximum drain-source voltage of 150 V, housed in a compact 3-Pin SOT-23 surface-mount package.
This enhancement mode device features a small gate charge of 2.9 nC at Vgs, enabling fast switching speeds and high system efficiency. Its shielded-gate structure ensures excellent charge balance, significantly reducing the figure of merit (FOM) and enhancing power density.
With a maximum power dissipation of 1.5 W and wide operational temperature range from -55°C to 150°C, the FDN86265P is suitable for use in demanding industrial, automotive, and commercial environments.
The soft reverse recovery body diode characteristic allows elimination of snubber circuits or use of lower voltage rated MOSFETs, improving overall circuit reliability and reducing component count.
Typical applications include synchronous rectification in AC/DC power supplies, power management circuits, and other power control functions that demand low switching losses and compact design.
Low gate charge supports efficient switching. Compact SOT-23 package suitable for space-saving designs. Wide temperature tolerance makes it versatile for harsh environments. Soft body diode improves switching performance and reliability.
Enables elimination of snubber circuits for cost and space savings. Explore more power semiconductor products and MOSFETs at EnvMart for your industrial and electronic component needs.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for the FDN86265P is 800 mA.
It can handle a maximum drain-source voltage of 150 V.
The typical gate charge at Vgs is 2.9 nC, which helps in reducing switching losses.
This model is housed in a compact 3-Pin SOT-23 surface-mount package.
The maximum power dissipation is 1.5 W, allowing for steady operation under load.
It has a wide operating temperature range from -55°C to 150°C.
The forward voltage of the body diode is -1.3 V.
The maximum gate-source voltage is -25 V to +25 V.
The height is 0.94 mm and the width is 1.4 mm.
This model features a P-channel type channel.
It is suitable for synchronous rectification in AC/DC power supplies and power management circuits.
The maximum drain-source resistance is 2.2 Ω.
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