onsemi PowerTrench Type P-Channel MOSFET 22A 150V Enhancement Mode 8-Pin WDFN FDMS86263P

onsemi FDMS86263P PowerTrench Type P-Channel MOSFET is designed for efficient power switching in industrial and electronic systems. This semiconductor device operates in enhancement mode with a maximum continuous drain current of 22 amperes and a maximum drain source voltage of 150 volts. Packaged in an 8-pin WDFN surface mount format, it provides a compact footprint suitable for space-constrained designs.

The device features low typical gate charge of 45 nanocoulombs and low maximum drain source resistance of 94 milliohms, enhancing switching speed and reducing power loss. Its maximum power dissipation of 104 watts supports reliable performance under demanding electrical loads.

Engineered to function from -55°C to 150°C, the MOSFET remains stable across a wide temperature range, ensuring durability in harsh environments. The maximum gate source voltage is rated between -25 volts and +25 volts, allowing robust gate control. Its physical dimensions are 5 mm in length, 5.85 mm in width, and 1.05 mm in height, conforming to modern compact package requirements.

PowerTrench technology employed in this MOSFET enhances system efficiency and power density by combining small gate charge and optimized body diode recovery characteristics. This makes the FDMS86263P exceptionally suited for power management, electronic component assemblies, and industrial equipment needing efficient and reliable power switching.

Features PowerTrench technology optimized for high efficiency. Supports surface mount with 8 pins for compact installation. Enhancement mode channel for improved switching performance. Maximum power dissipation rating of 104 watts ensures robustness.

Wide temperature operation from -55°C to 150°C for diverse applications. Low maximum drain source resistance of 94 milliohms reduces conduction loss. Maximum gate source voltage rating of -25 to +25 volts for stable control.

Compact dimensions: length 5 mm, width 5.85 mm, height 1.05 mm. Ideal for industrial, electronic, and power management applications.

This MOSFET is widely applicable in industrial, laboratory, and power electronics fields. Its integration into circuits enhances power efficiency and switching performance, making it suitable for electronic components, power supplies, and semiconductor applications.

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