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onsemi N-Channel IGBT 80 A 650 V 3-Pin TO-3PF Through Hole FGAF40S65AQ
Specifications
| Country of Origin | Korea |
|---|---|
| Brand | onsemi |
| Length | 19.1mm |
| Model | FGAF40S65AQ |
| Width | 15.3mm |
| Mount Type | Through Hole |
| Series | Trench |
| Energy Rating | 325mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-3PF |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Pb-Free and is RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 94W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- Maximum continuous collector current of 80 A for high load applications.
- Rated maximum collector emitter voltage of 650 V.
- Low saturation voltage of 1.6 V typical at 40 A current.
- Through hole mount type with a 3-Pin TO-3PF package.
- Wide operating temperature range from -55°C to 175°C.
- High maximum power dissipation of 94 W ensuring efficient heat management.
- Device incorporates novel field stop technology for optimum converter performance.
- Monolithic reverse conducting diode integrated with fast switching capability.
Product Description
onsemi FGAF40S65AQ is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power electronics applications. This 80 A, 650 V rated device features a 3-Pin TO-3PF through hole package ideal for industrial, consumer, and HVAC electronic equipment.
It utilizes novel 4th generation field stop technology for improved switching efficiency and supports a maximum junction temperature of 175°C, enabling reliable operation under harsh conditions. The device offers a low collector emitter saturation voltage of approximately 1.6 V at 40 A, reducing conduction losses and improving system efficiency.
Key features include a high maximum continuous collector current rating of 80 A, a robust power dissipation capacity of 94 W, and a wide operating temperature range from -55°C to 175°C. The IGBT integrates a monolithic reverse conducting diode for fast switching and improved performance in power factor correction (PFC), welding, and various industrial applications.
This device conforms to Pb-Free and RoHS standards, ensuring environmental compliance. Its through hole mount design facilitates easy installation and reliable electrical connections.
Typical applications for the onsemi FGAF40S65AQ include consumer appliances, industrial power conversion, welding equipment, and power factor correction stages in converters. Manufactured in Korea, Republic Of, this device is suitable for rigorous industrial environments requiring durable and efficient semiconductor switching components.
Maximum continuous collector current of 80 A for high load applications. Rated maximum collector emitter voltage of 650 V. Low saturation voltage of 1.6 V typical at 40 A current. Through hole mount type with a 3-Pin TO-3PF package.
Wide operating temperature range from -55°C to 175°C. High maximum power dissipation of 94 W ensuring efficient heat management. Device incorporates novel field stop technology for optimum converter performance. Monolithic reverse conducting diode integrated with fast switching capability.
Pb-Free and RoHS compliant construction. Designed for consumer appliances, industrial welding, and power factor correction applications. Discover a broad selection of semiconductors and IGBTs at EnvMart to support your industrial and electronic design projects.
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Frequently Asked Questions
The maximum continuous collector current for the onsemi FGAF40S65AQ is 80 A, suitable for high load applications.
This model has a rated maximum collector emitter voltage of 650 V.
The typical collector emitter saturation voltage at 40 A current is approximately 1.6 V.
The FGAF40S65AQ has a high maximum power dissipation capacity of 94 W, ensuring efficient heat management.
It operates within a wide temperature range from -55°C to 175°C.
This model features a through hole mount type with a 3-Pin TO-3PF package.
The dimensions of this IGBT are 19.1 mm in length and 15.3 mm in width.
It incorporates novel 4th generation field stop technology for improved switching efficiency.
Yes, the device conforms to Pb-Free and RoHS standards, ensuring environmental compliance.
This IGBT is suitable for applications such as consumer appliances, industrial power conversion, welding equipment, and power factor correction stages in converters.
The maximum gate emitter voltage for the FGAF40S65AQ is ±20 V.
This device is manufactured in the Republic of Korea.
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