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DiodesZetex Dual 2 N-Channel Power MOSFET 33.2A 60V Enhancement Mode 8-Pin PowerDI5060 DMTH6016LPD-13
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.05mm |
| Length | 5.85mm |
| Model | DMTH6016LPD-13 |
| Width | 4.95mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +175°C |
| Package Type | PowerDI5060 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101, J-STD-020, RoHS, UL 94V-0, MIL-STD-202 |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 33.2A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 28mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 37.5W |
| Typical Gate Charge Qg @ Vgs | 8.4nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Dual |
Key Features
- Designed to minimize on-state resistance while maintaining superior switching performance.
- Supports a maximum continuous drain current of 33.2 amperes.
- Surface mount package type PowerDI5060 with 8 pins for compact PCB integration.
- Operates reliably at temperatures from -55°C up to +175°C.
- Dual transistor configuration with two elements per chip.
- Complies with automotive standard AEC-Q101 and several quality standards including RoHS and MIL-STD-202.
- Low typical gate charge of 8.4 nC ensuring fast switching speeds.
- Forward voltage of 0.7 V and maximum power dissipation of 37.5 W.
Product Description
DiodesZetex DMTH6016LPD-13 is a dual 2 N-channel power MOSFET specifically engineered for high-efficiency power management applications. Featuring a maximum continuous drain current of 33.2 A and a maximum drain-source voltage of 60 V, this MOSFET offers excellent performance in demanding electrical environments.
Its surface-mount PowerDI5060 package with 8 pins ensures ease of integration onto printed circuit boards while maintaining a compact footprint with dimensions of approximately 5.85 mm length, 4.95 mm width, and a height of 1.05 mm. The transistor configuration includes dual elements per chip which support enhanced channel mode operation, enhancing efficiency and reliability.
Rated for operation in extreme conditions ranging from -55°C to +175°C, the DMTH6016LPD-13 maintains stability and functionality in high ambient temperature environments, making it suitable for automotive and industrial electronic applications. It complies with stringent standards such as AEC-Q101, J-STD-020, RoHS, UL 94V-0, and MIL-STD-202.
Additional technical advantages include low gate charge (8.4 nC at gate-source voltage), a forward voltage of 0.7 V, and a maximum power dissipation of 37.5 W. These features contribute to its high conversion efficiency and fast switching speed, minimizing losses and improving system performance.
This MOSFET is ideal for applications such as engine management systems, body control electronics, DC-DC converters, and other power electronics in automotive and industrial controls.
Designed to minimize on-state resistance while maintaining superior switching performance. Maximum continuous drain current of 33.2 A supports high power loads. 60 V maximum drain-source voltage rated for a wide range of applications.
Compact 8-pin PowerDI5060 surface mount package for PCB integration. Wide operating temperature range from -55°C to +175°C. Dual transistor elements per chip for enhanced reliability. Compliance with key automotive and industrial standards including AEC-Q101 and RoHS.
Fast switching speed with low typical gate charge of 8.4 nC. Ideal for high ambient temperature environments and power conversion tasks.
Explore the full range of Power MOSFETs and semiconductor components on EnvMart. Find high-quality industrial and automotive-grade MOSFETs with detailed specifications and technical compliance.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 33.2 A.
It has a maximum drain-source voltage rating of 60 V.
The dimensions of the PowerDI5060 package are approximately 5.85 mm in length, 4.95 mm in width, and 1.05 mm in height.
The typical gate charge is 8.4 nC at gate-source voltage.
This MOSFET operates reliably in a temperature range from -55°C to +175°C.
The maximum power dissipation is 37.5 W.
Each chip contains two elements, as it is a dual transistor configuration.
It complies with the automotive standard AEC-Q101.
The forward voltage is 0.7 V.
The mount type for this component is surface mount.
This MOSFET complies with AEC-Q101, J-STD-020, RoHS, UL 94V-0, and MIL-STD-202.
The maximum gate-source voltage is 20 V.
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