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Infineon HEXFET Type P-Channel MOSFET 70 A 55 V Enhancement Mode Surface Mount TO-263 Package IRF4905STRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF4905STRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 70A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 120nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.3V |
Key Features
- Maximum continuous drain current of 70 amperes enables high power handling.
- Drain-source voltage rating of 55 volts suitable for demanding electronic circuits.
- Low on-state resistance (Rds(on)) of 20 milliohms reduces power loss and heat generation.
- Designed for surface mount applications with a 3-pin TO-263 package for easy assembly.
- Operating temperature range from -55°C to +150°C ensures reliable performance in harsh environments.
- Typical gate charge of 120 nanocoulombs at Vgs facilitates fast switching speeds.
- Gate-source voltage limits from -20 V to +20 V provide safe control margins.
- Power dissipation of up to 170 watts supports heavy-duty operation.
Product Description
Infineon IRF4905STRLPBF is a HEXFET type P-Channel MOSFET designed for high-performance power management applications. It features a maximum continuous drain current of 70 A and a maximum drain-source voltage of 55 V, making it suitable for demanding electronic and industrial applications requiring efficient switching and power handling.
The device operates in enhancement mode with a low drain-source resistance of 20 milliohms, improving energy efficiency by minimizing conduction losses during operation. Its robust TO-263 D2PAK surface mount package allows easy integration onto PCBs for automated assembly processes.
With an operating temperature range from -55°C to +150°C, the IRF4905STRLPBF ensures reliable performance in environments with wide temperature variations, including automotive and industrial automation contexts. The typical gate charge of 120 nC supports fast switching capabilities critical for high-frequency power converters and motor control circuits.
The gate-to-source voltage rating of -20 V to +20 V provides safe margins for controlling the MOSFET without damage risks. It supports pulsed drain currents up to 280 A, enabling transient load handling in dynamic circuits.
Maximum continuous drain current of 70 A supports high power loads. Drain-source voltage rating of 55 V for versatile application use. Low Rds(on) value enhances system efficiency and reduces thermal dissipation. Surface mount TO-263 package enables straightforward PCB assembly.
Wide temperature tolerance from -55°C to +150°C ensures durability in harsh conditions. Fast switching enabled by typical gate charge of 120 nC at Vgs. Robust design suitable for repetitive avalanche and automotive applications.
Power dissipation rating of 170 W accommodates demanding usage. Stable forward voltage of -1.3 V contributes to effective circuit operation. Ideal for power management, motor control, switching power supplies, and industrial automation.
This Infineon MOSFET is highly applicable for industrial, automotive, and power electronic systems requiring high efficiency and reliable performance under rigorous conditions. Its optimized HEXFET construction ensures energy savings and thermal stability for critical applications.
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Frequently Asked Questions
The maximum continuous drain current for the IRF4905STRLPBF is 70 amperes.
This model has a maximum drain-source voltage rating of 55 volts.
The low on-state resistance (Rds(on)) of this MOSFET is 20 milliohms, which helps reduce power loss and heat generation.
The operating temperature range for the IRF4905STRLPBF is from -55°C to +150°C.
The typical gate charge for the IRF4905STRLPBF at Vgs is 120 nanocoulombs.
This MOSFET is designed in a TO-263 surface mount package, which facilitates easy assembly.
The maximum power dissipation for this model is rated at 170 watts.
The gate-source voltage limits for the IRF4905STRLPBF range from -20 V to +20 V.
The dimensions of this model are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
This model features a P-Channel type configuration.
This MOSFET is suitable for power management, motor control, switching power supplies, and industrial automation applications.
The stable forward voltage for this model is -1.3 V.
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