Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Infineon HEXFET N-Channel Power MOSFET 17A, 55V, Enhancement Mode, 3-Pin TO-252 IRLR024NTRLPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin China
Brand Infineon
Height 2.39mm
Length 6.73mm
Model IRLR024NTRLPBF
Width 6.22mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 17A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 110mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 45W
Typical Gate Charge Qg @ Vgs 15nC
Maximum Gate Source Voltage Vgs -16, +16V
Forward Voltage Vf 1.3V

Key Features

  • Features enhancement mode operation for efficient switching.
  • Packaged in 3-pin TO-252 surface mount style.
  • Low maximum drain-source resistance of 110 milliohms.
  • Typical gate charge of 15 nanoCoulombs at gate-source voltage.
  • High maximum power dissipation rate of 45 watts.
  • Operates reliably from -55°C to 175°C for extended temperature range.
  • Forward voltage drop is 1.3 volts during conduction.
  • Designed for robust industrial and electronic applications, including power management.

Product Description

Infineon IRLR024NTRLPBF HEXFET N-Channel Power MOSFET is engineered for efficient power switching applications in industrial and electronic circuits. Designed with an enhancement mode channel, it offers a continuous drain current capacity of 17 amperes and a maximum drain-source voltage rating of 55 volts, making it suitable for moderate power loads and high-frequency switching tasks.

The device is housed in a 3-pin TO-252 surface mount package that facilitates easy PCB integration and reliable thermal management. With a low maximum drain-source resistance of 110 milliohms, it minimizes conduction losses, improving overall circuit efficiency. The typical forward voltage of 1.3 volts ensures effective power handling during operation.

Key operational parameters include a maximum power dissipation of 45 watts and a minimal gate charge of 15 nanoCoulombs, which contribute to rapid switching capabilities and reduced gate drive power requirements. The MOSFET supports wide temperature operation from -55°C up to 175°C, enabling use in demanding industrial environments without performance degradation.

The compact physical dimensions (length 6.73 mm, width 6.22 mm, height 2.39 mm) allow for space-efficient PCB layouts. However, it does not conform to automotive standards and is manufactured in China, providing reliable quality for standard electronic and power management systems.

Features enhancement mode for efficient switching. 3-pin TO-252 surface mount for compact design. Maximum continuous drain current of 17A. Low Rds(on) of 110 milliohms to reduce conduction losses. Typical gate charge of 15nC enables fast switching.

Forward voltage drop of 1.3V under conduction. High power dissipation rating of 45W for robust operation. Wide operating temperature range of -55°C to 175°C. Compact dimensions suitable for tight layouts. Manufactured in China without automotive certification.

This MOSFET is ideal for power electronics, industrial automation, and electronic component applications requiring reliable and efficient power switching. Browse EnvMart’s extensive MOSFET category for similar power management devices.

Infineon HEXFET N-Channel Power MOSFET 17A, 55V, Enhancement Mode, 3-Pin TO-252 IRLR024NTRLPBF
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current of this model is 17A.

This MOSFET has a maximum drain-source voltage rating of 55V.

It is packaged in a 3-pin TO-252 surface mount style.

The maximum power dissipation rate is 45 watts.

The typical gate charge is 15 nanoCoulombs at gate-source voltage.

It operates reliably from -55°C to 175°C.

The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.

The maximum drain-source resistance is 110 milliohms.

The forward voltage drop is 1.3 volts during conduction.

This model has an N-channel type.

The maximum gate-source voltage is -16V to +16V.

This model does not conform to automotive standards.

Related Products

Other Products from this brand

$0.62
$0.61 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$0.62
$0.61
Tax included