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| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRLR024NTRLPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
Infineon IRLR024NTRLPBF HEXFET N-Channel Power MOSFET is engineered for efficient power switching applications in industrial and electronic circuits. Designed with an enhancement mode channel, it offers a continuous drain current capacity of 17 amperes and a maximum drain-source voltage rating of 55 volts, making it suitable for moderate power loads and high-frequency switching tasks.
The device is housed in a 3-pin TO-252 surface mount package that facilitates easy PCB integration and reliable thermal management. With a low maximum drain-source resistance of 110 milliohms, it minimizes conduction losses, improving overall circuit efficiency. The typical forward voltage of 1.3 volts ensures effective power handling during operation.
Key operational parameters include a maximum power dissipation of 45 watts and a minimal gate charge of 15 nanoCoulombs, which contribute to rapid switching capabilities and reduced gate drive power requirements. The MOSFET supports wide temperature operation from -55°C up to 175°C, enabling use in demanding industrial environments without performance degradation.
The compact physical dimensions (length 6.73 mm, width 6.22 mm, height 2.39 mm) allow for space-efficient PCB layouts. However, it does not conform to automotive standards and is manufactured in China, providing reliable quality for standard electronic and power management systems.
Features enhancement mode for efficient switching. 3-pin TO-252 surface mount for compact design. Maximum continuous drain current of 17A. Low Rds(on) of 110 milliohms to reduce conduction losses. Typical gate charge of 15nC enables fast switching.
Forward voltage drop of 1.3V under conduction. High power dissipation rating of 45W for robust operation. Wide operating temperature range of -55°C to 175°C. Compact dimensions suitable for tight layouts. Manufactured in China without automotive certification.
This MOSFET is ideal for power electronics, industrial automation, and electronic component applications requiring reliable and efficient power switching. Browse EnvMart’s extensive MOSFET category for similar power management devices.
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