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Infineon HEXFET N-Channel MOSFET 160A 30V Enhancement Mode 3-Pin TO-252 IRLR8743TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRLR8743TRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 160A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 3.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 135W |
| Typical Gate Charge Qg @ Vgs | 39nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Delivers a maximum continuous drain current of 160A for robust power handling.
- 30 V maximum drain-source voltage ensures safe operation under demanding conditions.
- Exhibits very low on-resistance of 3.9mΩ to minimize power loss.
- Enhancement mode channel for efficient switching performance.
- Surface mount TO-252 package supports easy PCB integration.
- Handles maximum power dissipation of 135 W for high reliability.
- Operates within a temperature range from -55°C to +175°C for industrial-grade applications.
- Features typical gate charge of 39 nC at Vgs for fast switching speed.
Product Description
Infineon IRLR8743TRPBF HEXFET N-Channel MOSFET is a high-performance enhancement mode transistor designed for power management in industrial and electronic automation systems. Rated for a maximum continuous drain current of 160A and a maximum drain-source voltage of 30V, this device excels in efficiency and thermal stability with a low Rds(on) value of 3.9 mΩ. It comes in a compact TO-252 surface mount package, facilitating compact and efficient PCB layouts.
This MOSFET is capable of dissipating up to 135 W of power and operates reliably from -55°C up to 175°C, making it suitable for heavy-duty applications under harsh environmental conditions. Its typical gate charge of 39 nC at Vgs enables fast switching, improving overall circuit performance and power savings.
Key applications include high-frequency synchronous buck converters used in computer power supplies, isolated DC-DC converters for telecom systems, and various industrial automation power management tasks. The use of HEXFET technology reduces conduction losses significantly, enhancing energy efficiency and device reliability.
The surface mount TO-252 package supports easy integration in modern circuits requiring compact and robust power transistors. Its gate-source voltage tolerance (-20 V to +20 V) provides extra safety margin and protects the device from voltage spikes.
Delivers high continuous current capacity of 160A with low conduction losses. Supports high power dissipation of 135 W suitable for demanding industrial applications. Capable of operating within wide temperature ranges for reliability in harsh conditions.
Compact TO-252 package allows for efficient PCB space utilization and thermal management. Typical gate charge of 39 nC ensures efficient switching speed and power savings. Low forward voltage of 1 V to reduce losses in electronic circuits.
Enhanced safety from wide gate-source voltage limits. Well suited for applications in automation, industrial power management, and computer power supplies. Explore more products in the MOSFET category on EnvMart for reliable and efficient semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 160A.
It can handle a maximum drain-source voltage of 30V.
The on-resistance is very low at 3.9 mΩ, which helps minimize power loss.
This MOSFET can dissipate up to 135 W of power.
It operates reliably within a temperature range from -55°C to 175°C.
It comes in a TO-252 surface mount package, facilitating easy PCB integration.
The typical gate charge is 39 nC at Vgs, which enables fast switching speed.
The forward voltage is 1 V, which helps reduce losses in electronic circuits.
This model has a pin count of 3.
It is suitable for high-frequency synchronous buck converters, isolated DC-DC converters, and various industrial automation power management tasks.
The maximum gate-source voltage tolerance is -20V to +20V, providing an extra safety margin.
The country of origin for this MOSFET is India.
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