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Infineon HEXFET N-Channel MOSFET 42 A 55 V Enhancement 3-Pin TO-252 IRLR2905TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.39mm
Length 6.73mm
Model IRLR2905TRPBF
Width 6.22mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 42A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 40mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 110W
Typical Gate Charge Qg @ Vgs 48nC
Maximum Gate Source Voltage Vgs -16, +16V
Forward Voltage Vf 1.3V

Key Features

  • The device is a surface mount N-channel MOSFET designed for power switching applications.
  • It features an enhancement mode channel with a maximum drain source resistance of 40 milliohms.
  • Maximum power dissipation rating is 110 W for reliable thermal performance.
  • The maximum operating temperature can reach up to 175°C making it suitable for demanding environments.
  • The typical gate charge at 4.8 V gate source is 48 nC enabling fast switching.
  • The MOSFET includes a maximum gate source voltage range of -16 V to +16 V.
  • The compact TO-252 package size is approximately 6.73 mm by 6.22 mm with a height of 2.39 mm.
  • Operates over a wide temperature range from -55°C to +175°C ensuring versatility.

Product Description

Infineon IRLR2905TRPBF HEXFET N-Channel MOSFET is a high-performance power transistor designed for efficient power switching and amplification in industrial and electronic applications. It supports a maximum continuous drain current of 42 A and a drain-source voltage up to 55 V, ensuring robust operation under demanding electrical loads.

This MOSFET uses an enhancement mode N-channel channel which provides a low maximum drain source resistance (40 milliohms), minimizing conduction losses and increasing system efficiency. The device is housed in a compact TO-252 surface mount package facilitating easy mounting on PCB layouts where space optimization is crucial.

Designed for high power dissipation up to 110 W, this transistor can maintain thermal stability at operating temperatures reaching 175°C, making it suitable for automotive electronics, industrial machinery, power supplies, and other demanding environments. The maximum gate source voltage rating of -16 V to +16 V and a typical gate charge of 48 nC enables fast switching performance with effective control.

The physical dimensions of length 6.73 mm, width 6.22 mm, and height 2.39 mm ensure compatibility with modern compact electronic designs. Operating temperature range from -55°C to 175°C enables usage in harsh environmental conditions.

Surface mount TO-252 package type for compact designs. 42 A maximum continuous drain current and 55 V voltage rating. Low conduction losses with 40 milliohm on resistance. High power dissipation capacity of 110 W. Wide operating temperature range from -55°C to 175°C.

Typical gate charge of 48 nC for high-speed switching. Robust gate voltage range of -16 V to +16 V.

These features make the Infineon IRLR2905TRPBF an ideal choice for industrial electronics, automotive power control systems, and advanced consumer electronics requiring efficient power management solutions. Explore additional MOSFETs and semiconductor components by Infineon and other brands in the semiconductors category to find suitable devices to enhance your designs.

Infineon HEXFET N-Channel MOSFET 42 A 55 V Enhancement 3-Pin TO-252 IRLR2905TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 42 A.

This MOSFET has a maximum drain-source voltage rating of 55 V.

It is housed in a compact TO-252 surface mount package.

The maximum power dissipation capacity of this unit is 110 W.

The typical gate charge at 4.8 V gate source is 48 nC.

The maximum gate-source voltage range is from -16 V to +16 V.

The dimensions are approximately 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.

The maximum operating temperature can reach up to 175°C.

The minimum operating temperature is -55°C.

The maximum drain-source resistance is 40 milliohms.

This model uses an enhancement mode N-channel.

The country of origin for this MOSFET is India.

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