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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRLR2905TRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 42A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
Infineon IRLR2905TRPBF HEXFET N-Channel MOSFET is a high-performance power transistor designed for efficient power switching and amplification in industrial and electronic applications. It supports a maximum continuous drain current of 42 A and a drain-source voltage up to 55 V, ensuring robust operation under demanding electrical loads.
This MOSFET uses an enhancement mode N-channel channel which provides a low maximum drain source resistance (40 milliohms), minimizing conduction losses and increasing system efficiency. The device is housed in a compact TO-252 surface mount package facilitating easy mounting on PCB layouts where space optimization is crucial.
Designed for high power dissipation up to 110 W, this transistor can maintain thermal stability at operating temperatures reaching 175°C, making it suitable for automotive electronics, industrial machinery, power supplies, and other demanding environments. The maximum gate source voltage rating of -16 V to +16 V and a typical gate charge of 48 nC enables fast switching performance with effective control.
The physical dimensions of length 6.73 mm, width 6.22 mm, and height 2.39 mm ensure compatibility with modern compact electronic designs. Operating temperature range from -55°C to 175°C enables usage in harsh environmental conditions.
Surface mount TO-252 package type for compact designs. 42 A maximum continuous drain current and 55 V voltage rating. Low conduction losses with 40 milliohm on resistance. High power dissipation capacity of 110 W. Wide operating temperature range from -55°C to 175°C.
Typical gate charge of 48 nC for high-speed switching. Robust gate voltage range of -16 V to +16 V.
These features make the Infineon IRLR2905TRPBF an ideal choice for industrial electronics, automotive power control systems, and advanced consumer electronics requiring efficient power management solutions. Explore additional MOSFETs and semiconductor components by Infineon and other brands in the semiconductors category to find suitable devices to enhance your designs.
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