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STMicroelectronics MDmesh M2 N-Channel MOSFET, 22 A, 650 V Enhancement Mode, 3-Pin TO-247 STW28N60M2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW28N60M2 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 22A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
Key Features
- MDmesh M2 series offers low gate charge and excellent output capacitance characteristics.
- Designed for resonant-type switching supplies such as LLC converters.
- Through hole mounting with 3 pins for ease of installation.
- Maximum power dissipation of 170W supports high-power applications.
- Typical gate charge of 36nC ensures efficient switching performance.
- Operating temperature ranges from -55°C to 150°C for reliability in harsh environments.
- Maximum drain-source resistance of 150mΩ improves conduction efficiency.
- Compact dimensions of 20.15mm height, 15.75mm length, and 5.15mm width optimize board space usage.
Product Description
STMicroelectronics STW28N60M2 is an N-Channel MDmesh™ M2 Series MOSFET designed for power electronics applications requiring efficient switching and robust performance. This MOSFET features a maximum continuous drain current of 22A and a maximum drain-source voltage of 650V, suitable for high-voltage power conversion circuits.
The device uses an enhancement mode channel and is housed in a 3-pin TO-247 package with through-hole mounting for secure mechanical and electrical connection.
Key attributes include a low typical gate charge of 36nC, a maximum drain-source resistance of 150mΩ, and a maximum power dissipation rating of 170W, making it ideal for resonant switching supplies such as LLC converters.
Its robust thermal performance includes a minimum operating temperature of -55°C and maximum operating temperature up to 150°C, ensuring reliability in industrial, commercial, and laboratory environments.
Low gate charge for enhanced switching efficiency. High maximum power dissipation supports demanding load conditions. Compact TO-247 package simplifies assembly and cooling. Wide operating temperature range for versatile use.
Designed especially for resonant-type switching power supplies. Low forward voltage drop for improved performance. High maximum gate-source voltage tolerance for protection. Durable construction to withstand rugged industrial conditions.
This MOSFET suits industrial applications including power management, motor drives, and power supplies in manufacturing and automation sectors. Explore more Power MOSFETs and semiconductor components from STMicroelectronics in EnvMart's Electronics & Electricals category.
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Frequently Asked Questions
The maximum continuous drain current for the STW28N60M2 is 22A.
This model has a maximum drain-source voltage rating of 650V.
The typical gate charge for the STW28N60M2 is 36nC.
The maximum power dissipation rating is 170W.
The dimensions of the TO-247 package are 20.15mm in height, 15.75mm in length, and 5.15mm in width.
The maximum drain-source resistance for this MOSFET is 150mΩ.
The operating temperature range is from -55°C to 150°C.
It uses through-hole mounting with 3 pins for installation.
This MOSFET features an N-channel type.
It is designed for resonant-type switching power supplies, such as LLC converters, and is suitable for industrial applications including power management and motor drives.
The maximum gate-source voltage tolerance is -25V to +25V.
This model belongs to the MDmesh M2 series.
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