STMicroelectronics N-Channel MDmesh K5, SuperMESH5 MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-220 STP2N80K5

The STMicroelectronics STP2N80K5 is an N-Channel MOSFET transistor from the MDmesh K5, SuperMESH5 series, engineered for power electronics applications demanding up to 2 amps continuous drain current and 800 volts drain-source voltage.

This device is housed in a compact 3-pin TO-220 package designed for through-hole mounting, ensuring easy integration into printed circuit boards for industrial, laboratory, and commercial electronic assemblies.

Operating in enhancement mode, it achieves a maximum drain-source resistance of 4.5 ohms, balancing switching performance and conduction efficiency. The maximum power dissipation rating of 45 watts allows for reliable thermal handling under moderate load conditions.

The gate charge of 9.5 nanocoulombs at the gate-source voltage supports fast switching capabilities, making it suitable for switching power supplies and other power conversion equipment.

Designed to withstand environmental extremes, the MOSFET functions over a temperature range from -55°C to 150°C. Its robust maximum gate-source voltage rating of 30 volts protects against voltage spikes and ensures device durability.

Typical forward voltage drop is 1.5 volts, contributing to overall system efficiency by minimizing conduction losses during MOSFET operation.

This product does not carry specific automotive certification or other industry approvals, making it most suited for general electronics, industrial controls, and power management uses.

The device operates in enhancement mode for efficient switching. Maximum drain-source resistance is 4.5 ohms ensuring reasonable conduction losses. Maximum power dissipation is rated at 45 watts for robust thermal management.

Gate charge at Vgs is 9.5 nC supporting fast switching. Wide operating temperature range from -55°C to 150°C supports harsh environments. Designed for through-hole mounting suitable for industrial PCB assemblies. Compact dimensions: length 10.4 mm, width 4.6 mm, height 15.75 mm.

Maximum gate-source voltage tolerance of 30 V protects device integrity. Typical forward voltage drop is 1.5 V contributing to efficient conduction. No specific automotive or industry standards compliance is indicated. This MOSFET is ideal for applications in industrial electronics, power supplies, motor control circuits, and other semiconductor-based power management systems.

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