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Toshiba N-Channel MOSFET, 56 A Maximum Continuous Drain Current, 120 V Maximum Drain Source Voltage, 3-Pin TK56A12N1,S4X(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK56A12N1,S4X(S |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 56A |
| Maximum Drain Source Voltage Vds | 120V |
| Maximum Drain Source Resistance Rds | 7.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 69nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Features an enhancement channel mode providing low Rds resistance.
- Operates with a maximum power dissipation of 45W ensuring efficient performance.
- Has a typical gate charge of 69 nC at Vgs providing fast switching capabilities.
- Equipped with 3 pins and a through-hole mount type for easy PCB integration.
- Constructed with a TO-220 package measuring 10mm length, 4.5mm width, and 15mm height.
- Supports a maximum gate source voltage range from -20V to +20V for versatile usage.
- Forward voltage is rated at -1.2V suitable for power applications.
- Designed to operate at a maximum temperature of 150°C for high reliability.
Product Description
Toshiba TK56A12N1,S4X(S is an N-Channel MOSFET transistor designed for power electronic applications requiring a maximum continuous drain current of 56 A and a maximum drain-source voltage of 120 V. The component features a through-hole mounted TO-220 package with three pins, ideal for integration in industrial power management and switching circuits.
This device operates in enhancement channel mode, minimizing drain-source resistance to 7.5 milliohms which contributes to efficient conduction and reduced heat generation. Typical gate charge of 69 nC enables fast switching transitions, improving the overall performance of the electronic system.
The maximum power dissipation is 45W, supporting substantial load handling capability. It also supports a gate-source voltage tolerance of -20V to +20V, providing flexibility in diverse circuitry. Forward voltage is -1.2V, optimizing voltage drop across the device.
Dimensions of the TO-220 package are length 10 mm, width 4.5 mm, and height 15 mm, facilitating practical layout designs. Designed to withstand operating temperatures up to 150 degrees Celsius, this MOSFET assures reliability in demanding environments such as industrial automation, power supplies, and motor controls.
Enhancement channel type for low resistance conduction. High current rating of 56 A for power applications. Compact TO-220 package suitable for through-hole mounting. Thermally robust with 150°C maximum operating temperature.
Supports a broad gate-source voltage range for flexible circuit design. Suitable for industrial, manufacturing, electronic assembly, and power management use cases.
This Toshiba MOSFET is a reliable choice for engineers looking for efficient switching components in power electronics. Its compact form factor and robust specifications meet the requirements of industrial and electronic manufacturing sectors. Browse more high-quality electronic components and MOSFETs at EnvMart for optimized solutions.
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Frequently Asked Questions
The Toshiba TK56A12N1,S4X(S has a maximum continuous drain current of 56 A.
This MOSFET supports a maximum drain-source voltage of 120 V.
The typical gate charge for this model is 69 nC at Vgs.
It has a maximum power dissipation rating of 45 W.
The TO-220 package measures 10 mm in length, 4.5 mm in width, and 15 mm in height.
This MOSFET is designed to operate at a maximum temperature of 150°C.
It features a through-hole mount type for easy PCB integration.
The forward voltage is rated at -1.2 V, suitable for power applications.
It supports a maximum gate-source voltage range from -20 V to +20 V.
This model is equipped with 3 pins.
The Toshiba TK56A12N1,S4X(S is an N-channel MOSFET.
The maximum drain-source resistance is rated at 7.5 mΩ.
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