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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD30N08S2L21ATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 26mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 136W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.9V |
Infineon IPD30N08S2L21ATMA1 is a high-performance OptiMOS N-Channel MOSFET designed for efficient power switching in advanced electronic applications. This device operates at a maximum drain-source voltage of 75 V and supports a continuous drain current of 30 A, making it suitable for demanding electronic and automotive power management systems.
The MOSFET's low on-resistance of 26 mΩ minimizes conduction losses, aiding energy efficiency and heat suppression. With a maximum power dissipation rating of 136 W, it facilitates robust thermal handling under high loads and elevated temperatures, supported by its wide operational temperature range from -55°C to 175°C.
The device's typical gate charge of 56 nC ensures rapid switching with minimal gate drive power, while the gate-source voltage rating allows operation from -20 V to +20 V, providing versatility in gate control circuit designs. Packaged in a 3-pin TO-252 surface-mount format, it is engineered for compact PCB designs requiring effective thermal management and board space optimization.
Applications include automotive DC-DC converters, synchronous rectifiers in power supplies, motor-drive inverter circuits, high-efficiency point-of-load converters, and board-level power management in vehicles requiring automotive grade reliability certified to AEC-Q101 standards.
High 75 V drain-source voltage enables resilient high-voltage switching tasks. 30 A continuous current capacity supports substantial power delivery requirements. Low 26 mΩ Rds(on) value reduces energy losses, enhancing overall system efficiency.
136 W power dissipation rating provides thermal robustness during demanding loads. 56 nC gate charge facilitates efficient switching speed and responsiveness. Wide -55°C to 175°C operating temperature range suitable for harsh environments.
TO-252 surface-mount package designed for compact and thermal-efficient PCB layout. ±20 V gate-source voltage tolerance allows design flexibility in gate driving schemes. Automotive AEC-Q101 certification endorses suitability for vehicle power management systems.
The Infineon IPD30N08S2L21ATMA1 MOSFET is a reliable choice for industrial, automotive, and advanced power electronics requiring compact, efficient, and thermally capable power switching solutions. Explore more semiconductor components in EnvMart's Electronics & Electricals catalog.
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