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Infineon OptiMOS N-Channel MOSFET, 75 V, 30 A, 136 W Power Dissipation, 3-Pin TO-252 Surface Mount IPD30N08S2L21ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.41mm
Length 6.73mm
Model IPD30N08S2L21ATMA1
Width 6.22mm
Mount Type Surface
Series OptiMOS
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 30A
Maximum Drain Source Voltage Vds 75V
Maximum Drain Source Resistance Rds 26mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 136W
Typical Gate Charge Qg @ Vgs 56nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.9V

Key Features

  • Designed for demanding electronic systems requiring high-voltage switching capability.
  • Supports continuous drain current up to 30 A for substantial load delivery.
  • Features low 26 mΩ drain-source resistance reducing conduction losses.
  • Offers maximum power dissipation of 136 W for improved thermal management.
  • Typical gate charge of 56 nC allows for faster switching speeds.
  • Wide operating temperature range from -55°C to 175°C ensures reliability in harsh environments.
  • Supplied in TO-252 package suitable for compact PCB assembly.
  • Supports ±20 V gate-source voltage tolerance for flexible gate-drive schemes.

Product Description

Infineon IPD30N08S2L21ATMA1 is a high-performance OptiMOS N-Channel MOSFET designed for efficient power switching in advanced electronic applications. This device operates at a maximum drain-source voltage of 75 V and supports a continuous drain current of 30 A, making it suitable for demanding electronic and automotive power management systems.

The MOSFET's low on-resistance of 26 mΩ minimizes conduction losses, aiding energy efficiency and heat suppression. With a maximum power dissipation rating of 136 W, it facilitates robust thermal handling under high loads and elevated temperatures, supported by its wide operational temperature range from -55°C to 175°C.

The device's typical gate charge of 56 nC ensures rapid switching with minimal gate drive power, while the gate-source voltage rating allows operation from -20 V to +20 V, providing versatility in gate control circuit designs. Packaged in a 3-pin TO-252 surface-mount format, it is engineered for compact PCB designs requiring effective thermal management and board space optimization.

Applications include automotive DC-DC converters, synchronous rectifiers in power supplies, motor-drive inverter circuits, high-efficiency point-of-load converters, and board-level power management in vehicles requiring automotive grade reliability certified to AEC-Q101 standards.

High 75 V drain-source voltage enables resilient high-voltage switching tasks. 30 A continuous current capacity supports substantial power delivery requirements. Low 26 mΩ Rds(on) value reduces energy losses, enhancing overall system efficiency.

136 W power dissipation rating provides thermal robustness during demanding loads. 56 nC gate charge facilitates efficient switching speed and responsiveness. Wide -55°C to 175°C operating temperature range suitable for harsh environments.

TO-252 surface-mount package designed for compact and thermal-efficient PCB layout. ±20 V gate-source voltage tolerance allows design flexibility in gate driving schemes. Automotive AEC-Q101 certification endorses suitability for vehicle power management systems.

The Infineon IPD30N08S2L21ATMA1 MOSFET is a reliable choice for industrial, automotive, and advanced power electronics requiring compact, efficient, and thermally capable power switching solutions. Explore more semiconductor components in EnvMart's Electronics & Electricals catalog.

Infineon OptiMOS N-Channel MOSFET, 75 V, 30 A, 136 W Power Dissipation, 3-Pin TO-252 Surface Mount IPD30N08S2L21ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 30 A, allowing it to support substantial power delivery requirements.

This MOSFET has a maximum drain-source voltage rating of 75 V, enabling it to handle high-voltage switching tasks.

It features a low on-resistance of 26 mΩ, which helps to minimize conduction losses and improve energy efficiency.

The maximum power dissipation capacity of this device is 136 W, supporting robust thermal management under high loads.

The typical gate charge for this model is 56 nC, which allows for faster switching speeds with minimal gate drive power.

It operates within a wide temperature range from -55°C to 175°C, ensuring reliability in harsh environments.

This model is supplied in a TO-252 surface-mount package, designed for compact PCB assembly and effective thermal management.

It supports a gate-source voltage tolerance of ±20 V, providing flexibility in gate-drive circuit designs.

This model is certified to the AEC-Q101 automotive standard, making it suitable for vehicle power management systems.

The dimensions of this unit are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.

It features an N-channel type, which is typical for enhancement mode MOSFETs used in power applications.

This model is suitable for applications such as automotive DC-DC converters, synchronous rectifiers, and motor-drive inverter circuits.

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