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Infineon OptiMOS P-Type P-Channel Power Transistor, 120 A, 40 V Enhancement Mode, 3-Pin TO-263 IPB120P04P4L03ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.4mm |
| Length | 10mm |
| Model | IPB120P04P4L03ATMA1 |
| Width | 9.25mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 5.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 136W |
| Typical Gate Charge Qg @ Vgs | 180nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
| OptiMOS™ P-Channel Series | Temperature range from -55°C to +175°C |
Key Features
- This enhancement-mode MOSFET features ultra-low switching and conduction losses for efficient power management.
- Designed for high power dissipation up to 136W, supporting robust thermal performance.
- Operates over a wide temperature range from -55°C to 175°C, suitable for automotive and industrial applications.
- Incorporates Avalanche rating and conforms to RoHS and AEC-Q automotive standards.
- Typical gate charge is 180nC with gate-source voltage limits of -16 V to +16 V to ensure stable control.
- Compact 3-pin TO-263 surface mount package enables easy PCB integration.
- Forward voltage of 1.3 V ensures efficient switching during conduction states.
Product Description
Infineon IPB120P04P4L03ATMA1 is a high-performance OptiMOS P-Type P-Channel Power Transistor designed for enhanced switching efficiency and reliable operation in power electronics.
It supports a maximum continuous drain current of 120 A and a maximum drain-source voltage of 40 V, operating in enhancement mode with very low on-state resistance of 5.2 mΩ, thereby minimizing conduction losses.
The transistor is packaged in a 3-Pin TO-263 surface mount package with dimensions approximately 10 mm length, 9.25 mm width, and 4.4 mm height, facilitating compact printed circuit board designs.
Its maximum power dissipation rating of 136 W combined with a maximum operating temperature of 175°C ensures suitability for demanding environments including automotive, motor control, DC-DC converters, and eMobility applications.
The device meets AEC-Q automotive qualification and RoHS directives, ensuring compliance with industry standards and environmental regulations.
Additional technical features include avalanche ratings for surge protection, a typical gate charge of 180 nC at gate-source voltage, and a gate voltage tolerance between -16 V and +16 V, providing stable gate control during operation.
This Infineon OptiMOS™ P-Channel MOSFET family delivers enhanced performance with ultra-low switching losses, optimized conduction efficiency, and high reliability, making it ideal for industrial, automotive, and commercial electronic power applications.
This enhancement-mode MOSFET features ultra-low switching and conduction losses for efficient power management. Designed for high power dissipation up to 136W, supporting robust thermal performance. Operates over a wide temperature range from -55°C to 175°C, suitable for automotive and industrial applications.
Incorporates Avalanche rating and conforms to RoHS and AEC-Q automotive standards. Typical gate charge is 180nC with gate-source voltage limits of -16 V to +16 V to ensure stable control. Compact 3-pin TO-263 surface mount package enables easy PCB integration.
Forward voltage of 1.3 V ensures efficient switching during conduction states. With a trusted brand like Infineon and its OptiMOS technology, this power transistor supports advanced electronic designs requiring high efficiency and ruggedness.
Explore the broad range of Infineon MOSFETs at EnvMart to find compatible components for your industrial and automotive power electronics needs.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120 A.
It can handle a maximum drain-source voltage of 40 V.
The maximum power dissipation rating is 136 W.
The dimensions of the TO-263 package are approximately 10 mm in length, 9.25 mm in width, and 4.4 mm in height.
The typical gate charge is 180 nC at gate-source voltage.
It operates over a wide temperature range from -55°C to 175°C.
The maximum gate-source voltage is between -16 V and +16 V.
The on-state resistance is 5.2 mΩ, which minimizes conduction losses.
This transistor complies with AEC-Q automotive standards and RoHS directives.
This model uses a P-Type channel in enhancement mode.
The forward voltage during conduction states is 1.3 V.
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