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DiodesZetex Isolated 2 Type P-Channel Power MOSFET, 3.1 A, 30 V Enhancement, 8-Pin SOIC DMP3085LSD-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMP3085LSD-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, J-STD-020 |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.1A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.7W |
| Typical Gate Charge Qg @ Vgs | 5.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.7V |
| Transistor Configuration | Isolated |
Key Features
- Features dual P-channel MOSFET configuration for efficient switching.
- Enhancement mode device with maximum power dissipation of 1.7 W.
- Low maximum drain-source resistance of 95 milliohms ensures minimal conduction losses.
- Operating temperature ranges from -55°C to +150°C for reliability in harsh environments.
- Typical gate charge of 5.2 nC supports fast switching performance.
- Complies with MIL-STD-202, RoHS, AEC-Q101 standards ensuring quality and environmental compliance.
- 8-pin SOIC surface mount package with compact dimensions of 4.95 mm length, 3.95 mm width, and 1.5 mm height.
Product Description
DiodesZetex DMP3085LSD-13 is an isolated dual P-channel power MOSFET designed for efficient power control applications in electronic and electrical engineering. It supports a maximum continuous drain current of 3.1 A and a maximum drain-source voltage rating of 30 V, making it suitable for low voltage power switching tasks.
This enhancement-mode MOSFET features a low maximum drain-source resistance of 95 milliohms to minimize conduction losses and improve energy efficiency. It is fabricated in an 8-pin SOIC surface mount package with compact dimensions: length 4.95 mm, width 3.95 mm, and a height of 1.5 mm, ideal for space-constrained PCB layouts.
The device supports a wide operating temperature range from -55°C up to +150°C, ensuring reliable performance in demanding industrial and automotive environments. It has a typical gate charge of 5.2 nC at Vgs, allowing rapid switching speeds for power management solutions. The MOSFET is rated for maximum power dissipation of 1.7 W. The transistor configuration is isolated, containing two elements per chip, enhancing its versatility in circuits.
This MOSFET meets rigorous industry standards including MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, and J-STD-020 certifications, ensuring high quality, safety, and environmental compliance. It does not conform to automotive specific standards.
Applications are found in discrete semiconductor power management within industrial electronics, automotive auxiliary systems, power supplies, and electronic control units. Its compact surface-mount design facilitates automated insertion and mass production efficiency.
Dual P-channel MOSFET configuration supports flexible power switching. Low Rds(on) minimizes power losses during conduction. Wide temperature range for harsh environment operation. Compact SOIC package fits compact PCB assemblies.
Compliant with MIL-STD-202, RoHS, AEC-Q101 and UL 94V-0 standards. High reliability for industrial and power electronics applications. Explore more from DiodesZetex Power MOSFET devices and reliable semiconductor components at EnvMart for industrial and manufacturing solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.1 A.
This power MOSFET has a maximum drain-source voltage rating of 30 V.
The maximum power dissipation for this unit is 1.7 W.
The typical gate charge at Vgs is 5.2 nC.
The dimensions of the 8-pin SOIC package are 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height.
The maximum drain-source resistance for this MOSFET is 95 milliohms.
It operates within a temperature range of -55°C to +150°C.
This model complies with MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, and J-STD-020 standards.
The DMP3085LSD-13 features an isolated transistor configuration with two elements per chip.
This device is a Type P-channel MOSFET.
The maximum gate-source voltage is -20V to +20V.
This MOSFET is suitable for discrete semiconductor power management in industrial electronics, automotive auxiliary systems, power supplies, and electronic control units.
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