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Infineon OptiMOS P Type P-Channel MOSFET 100 A 30 V Enhancement 8-Pin TDSON BSC060P03NS3EGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.35mm |
| Model | BSC060P03NS3EGATMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 9.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 61nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1.1V |
Key Features
- Supports high-current switching with 100 A maximum drain current capacity.
- Operates at low voltage levels up to 30 V drain-source rating.
- Features low 9.6mΩ on-resistance to minimize conduction losses.
- Allows efficient power dissipation up to 83 W for demanding applications.
- Incorporates 61nC typical gate charge for controlled switching performance.
- Robust gate-source voltage limit at ±25 V for reliable operation.
- Designed for surface-mount PCB assembly with an 8-pin TDSON package.
- Capable of functioning over a wide temperature range from -55°C to 150°C.
Product Description
Infineon BSC060P03NS3EGATMA1 is a high-performance OptiMOS P Type P-Channel MOSFET designed for power-switching in electronic circuits requiring robust current handling and low voltage operation. This enhancement mode MOSFET supports a maximum continuous drain current of 100 A and a drain-source voltage rating of 30 V, making it suitable for high-current low-voltage applications.
The device is packaged in an 8-pin TDSON surface-mount package with a low-profile height of 1.1 mm, providing compactness without compromising power capabilities. Its low on-resistance of 9.6 milliohms reduces conduction losses and heat generation, supporting up to 83 W of power dissipation.
The typical gate charge of 61 nanocoulombs allows for efficient switching dynamics under gate-source voltage limits of ±25 V, ensuring robust gate drive and protection. Its rated operating temperature range from -55°C to 150°C enables deployment in harsh industrial and commercial environments, including power supplies, DC motor drives, and battery management systems.
Supports high-current switching with 100 A drain current. 30 V drain-source voltage suitable for low voltage power stages. Low on-resistance 9.6 mΩ for minimal power loss. Power dissipation up to 83 W for demanding applications.
Typical gate charge 61 nC for controlled switching. Robust gate-source voltage ratings of ±25 V. Compact 8-pin TDSON package with 1.1 mm height. Wide temperature range -55°C to 150°C for diverse environments.
This MOSFET is ideal for synchronous buck converters, DC motor drives, point-of-load regulators, battery management in energy storage systems, and high-current load switches on compact printed circuit boards. Its combination of performance, size, and thermal endurance makes it a versatile component for industrial, laboratory, HVAC, manufacturing, and commercial electronic applications.
Explore more Infineon MOSFETs and other semiconductor components on EnvMart for industrial-grade solutions designed to meet rigorous quality and reliability standards.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
It has a drain-source voltage rating of 30 V.
The on-resistance is 9.6 mΩ, which helps minimize conduction losses.
This MOSFET can dissipate up to 83 W of power.
The typical gate charge is 61 nC, providing controlled switching performance.
The gate-source voltage limits are ±25 V.
It comes in an 8-pin TDSON package.
The height of this model is 1.1 mm.
It operates over a wide temperature range from -55°C to 150°C.
This model is suitable for applications such as synchronous buck converters, DC motor drives, and battery management systems.
The channel type is P-Channel, designed for enhancement mode operation.
The country of origin for this model is India.
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