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Infineon OptiMOS P Type P-Channel MOSFET, 40 A Continuous Drain Current, 30 V Drain Source Voltage BSZ086P03NS3EGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 3.4mm |
| Model | BSZ086P03NS3EGATMA1 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 150°C |
| Package Type | TSDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 69W |
| Typical Gate Charge Qg @ Vgs | 43.2nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1.1V |
Key Features
- Enhancement mode P-channel MOSFET for high current switching.
- Maximum continuous drain current of 40 amperes for heavy load applications.
- Low on-resistance of 13.4 milliohms minimizes conduction losses.
- Typical gate charge of 43.2 nanocoulombs balances switching speed and drive efficiency.
- Maximum power dissipation rated at 69 watts for high power handling.
- Wide operating temperature range from -55°C to 150°C supports demanding environments.
- Surface mount TSDSON package with 8 pins for compact PCB designs.
- Robust gate source voltage tolerance of -25 to +25 volts.
Product Description
Infineon BSZ086P03NS3EGATMA1 P-Channel MOSFET belongs to the OptiMOS P series, designed for robust and efficient power switching in electronic applications. Featuring a maximum continuous drain current of 40 A and a maximum drain source voltage of 30 V, this enhancement mode MOSFET is ideal for compact surface-mount assemblies.
This device uses a low-profile 8-pin TSDSON package that ensures efficient thermal dissipation and easy PCB integration, making it suitable for high-density electronic circuits. It operates reliably across a wide temperature range from -55°C to 150°C, accommodating harsh industrial, automotive, and telecommunications environments.
The MOSFET characteristics include a low maximum drain-source resistance (Rds(on)) of 13.4 milliohms, reducing conduction losses and improving overall system efficiency. The typical gate charge of 43.2 nanocoulombs facilitates optimized switching speeds with manageable gate drive effort.
Electrical robustness is ensured with a gate source voltage tolerance of -25 V to +25 V and a maximum power dissipation of 69 watts, allowing the device to handle significant power loads safely. Compact dimensions of 3.4mm x 3.4mm x 1.1mm support space-constrained designs.
Enhancement mode P-channel MOSFET for efficient power switching. 40 A continuous drain current capacity supports high load demands. Low on-resistance of 13.4 mΩ improves conduction efficiency. Gate charge of 43.2 nC balances fast switching and drive requirements.
High power dissipation of 69 W allows robust operation. Wide temperature range capability from -55°C to 150°C. Compact 8-pin TSDSON surface mount package. Gate source voltage rated to ±25 V for driving margin. Small form factor dimensions of 3.4 mm × 3.4 mm × 1.1 mm.
Applications include synchronous buck converter switches, point-of-load power conversion modules, battery management systems, low-side motor driver controls, and telecom or server power rails. The Infineon OptiMOS P series MOSFET is engineered for optimized efficiency and reliability in advanced power electronics.
Explore more high-performance discrete semiconductors and MOSFETs in the EnvMart Electronics & Electricals catalog.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 A, making it suitable for high load applications.
This P-channel MOSFET has a maximum drain-source voltage of 30 V.
The maximum drain-source resistance (Rds(on)) is 13.4 milliohms, which helps minimize conduction losses.
The typical gate charge for this device is 43.2 nanocoulombs, balancing switching speed and drive efficiency.
It is rated for a maximum power dissipation of 69 watts, allowing it to handle significant power loads safely.
This model operates reliably across a wide temperature range from -55°C to 150°C.
It comes in a compact 8-pin TSDSON surface mount package, suitable for high-density PCB designs.
The dimensions of this model are 3.4 mm x 3.4 mm x 1.1 mm.
The gate-source voltage tolerance is rated at -25 V to +25 V, providing a robust driving margin.
It is suitable for applications such as synchronous buck converter switches, battery management systems, and low-side motor driver controls.
This device operates in enhancement mode, which is typical for power switching applications.
The country of origin for this model is India.
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