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Vishay Single 1 N-Channel MOSFET 5.5 A 400 V TO-263-3 Package IRF730ASPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 9.65mm |
| Model | IRF730ASPBF |
| Width | 10.67mm |
| Maximum Operating Temperature | 150°C |
| Minimum Operating Temperature | -55°C |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.5A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 1Ω |
| Maximum Power Dissipation Pd | 74W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.6V |
| Transistor Configuration | Single |
Key Features
- Utilizes TO-263-3 package known for robust thermal performance.
- Maximum power dissipation of 74 W supporting reliable operation under load.
- Maximum gate-source voltage rating of 30 V ensures robust control.
- Operating temperature range from -55°C to 150°C suitable for harsh environments.
- Low maximum drain-source resistance (1 Ω) reduces conduction losses.
- Features trenchFET technology for improved switching efficiency.
- Complies with RoHS 2002/95/EC and IEC 61249-2-21 standards for environmental safety.
- Optimized for high-speed power switching and use in switch mode power supplies (SMPS).
Product Description
Vishay IRF730ASPBF is an N-channel MOSFET incorporating advanced trenchFET technology packaged in a TO-263-3 form factor. It offers a robust maximum continuous drain current of 5.5 A and maximum drain-source voltage of 400 V, making it well-suited for demanding industrial and electronic applications requiring efficient power switching.
This device supports a maximum power dissipation of 74 W, allowing for reliable operation in high-power circuits. It features a low drain-source resistance of 1 Ω, which minimizes conduction losses and enhances overall device efficiency.
The MOSFET is designed to operate across a wide temperature range of -55°C to 150°C, ensuring stable function in extreme environments typical of industrial, automotive, or power supply uses.
Additional enhancements include a maximum gate-source voltage of 30 V and a typical gate charge of 22 nC at Vgs, which simplify the driving requirements while improving switching performance. The product is halogen and lead-free and complies with RoHS 2002/95/EC and IEC 61249-2-21 regulations.
Common applications for the IRF730ASPBF include high speed power switching, switch mode power supplies (SMPS), and uninterruptible power supplies (UPS). It is engineered for efficient power management with excellent avalanche voltage and current characteristics, ensuring longevity and reliability.
Utilizes TO-263-3 package for superior thermal management. Maximum power dissipation rating supports heavy load conditions. Operates reliably under extreme temperature ranges. Compliant with international safety and environmental standards.
Optimized for reduced switching and conduction losses. Suitable for industrial, automotive, and electronic power applications. Explore more MOSFET devices and power components from Vishay on EnvMart to meet your electronic design requirements.
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Frequently Asked Questions
The maximum continuous drain current of this model is 5.5 A.
It has a maximum drain-source voltage rating of 400 V.
The maximum power dissipation supported by this model is 74 W.
It operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage for this model is 30 V.
The maximum drain-source resistance is 1 Ω, which helps reduce conduction losses.
This model utilizes a TO-263-3 package known for its robust thermal performance.
The typical gate charge at Vgs is 22 nC.
It is optimized for high-speed power switching and use in switch mode power supplies (SMPS).
The dimensions are 9.65 mm in length, 10.67 mm in width, and 4.83 mm in height.
It complies with RoHS 2002/95/EC and IEC 61249-2-21 standards for environmental safety.
The forward voltage for this model is 1.6 V.
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