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DiodesZetex Silicon Junction Switching Diode Surface Mount 300mA 100V 3-Pin SOT-23 MMBD7000HS-7-F

Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 3mm
Length 3mm
Model MMBD7000HS-7-F
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Power Dissipation Pd 350mW
Diode Configuration Series
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 300mA
Maximum Peak Reverse Repetitive Voltage Vrrm 100V

Key Features

  • Small signal diode packaged in a compact SOT-23 surface mount package.
  • Capable of a maximum power dissipation of 350mW for reliable operation.
  • Features a fast peak reverse recovery time of 4 nanoseconds, ideal for high speed switching.
  • Supports a peak non-repetitive forward surge current of up to 2 Amps.
  • Operational temperature range from -65°C to 150°C suitable for diverse environments.
  • Physical dimensions approximately 3mm length by 1.4mm width and 3mm height.
  • Three-pin configuration enabling easy insertion into circuit designs.
  • Manufactured with silicon junction technology ensuring stable diode performance.

Product Description

The DiodesZetex MMBD7000HS-7-F is a silicon junction switching diode tailored for surface mount technology using the SOT-23 package. This diode supports a maximum forward current of 300 milliamps and offers a peak repetitive voltage rating of 100 volts, making it suitable for a variety of discrete semiconductor applications where small signal switching is required.

Its compact SOT-23 form factor facilitates easy integration on printed circuit boards, optimizing space while ensuring efficient electrical performance. The diode exhibits a peak reverse recovery time of only 4 nanoseconds, allowing rapid switching speeds crucial in high-frequency electronics.

Engineered to dissipate up to 350 milliwatts of power, the device can handle short-duration surges up to 2 Amps without damage. It operates reliably across a wide temperature spectrum from -65°C to 150°C, making it appropriate for industrial, commercial, and laboratory uses.

Small signal diode packaged in a compact SOT-23 surface mount package. Supports maximum forward current of 300mA and power dissipation of 350mW. Provides fast switching capability with 4ns peak reverse recovery. Withstands surge currents up to 2A peak non-repetitive forward surge.

Operates across -65°C to 150°C temperature range for versatile use. Compact dimensions (3mm x 1.4mm x 3mm) for space-constrained electronics. Silicon junction technology offers stable and efficient diode performance.

This diode is ideal for incorporation into electronic circuits requiring efficient switching components, such as power management modules, signal rectification, and high-frequency switching in industrial equipment, laboratory instruments, and various manufacturing and commercial electronic assemblies.

Explore EnvMart's comprehensive catalog of Switching Diodes and semiconductor devices for diverse industrial applications. Our collection offers reliable components that meet stringent quality and performance standards.

DiodesZetex Silicon Junction Switching Diode Surface Mount 300mA 100V 3-Pin SOT-23 MMBD7000HS-7-F
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Frequently Asked Questions

The maximum forward current of this model is 300 milliamps.

It features a fast peak reverse recovery time of 4 nanoseconds, suitable for high-speed switching applications.

This diode can dissipate a maximum power of 350 milliwatts during operation.

It operates reliably across a temperature range from -65°C to 150°C.

The physical dimensions are approximately 3mm in length, 1.4mm in width, and 3mm in height.

The diode can withstand a peak non-repetitive forward surge current of up to 2 Amps.

It is packaged in a compact SOT-23 surface mount package.

This model has a 3-pin configuration, facilitating easy insertion into circuit designs.

The maximum peak reverse repetitive voltage rating is 100 volts.

The maximum forward voltage drop is 1.25 volts.

This diode is manufactured using silicon junction technology, ensuring stable performance.

It is suitable for applications requiring efficient switching components, such as power management modules and high-frequency switching in electronics.

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