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Infineon HEXFET Type P-Channel MOSFET 31A 55V Enhancement Surface Mount TO-252 IRFR5305TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRFR5305TRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.3V |
Key Features
- Designed for efficient power management with low on-resistance.
- Supports continuous drain current up to 31 amperes for high current applications.
- Operates reliably from -55°C to +175°C in a robust TO-252 package.
- Enhancement mode channel with 65 milliohm maximum drain-source resistance.
- High maximum power dissipation of 110 watts enabling diverse electronic applications.
- Surface mount design facilitates easy integration on standard PCBs.
- Typical gate charge of 63 nanocoulombs ensures fast switching performance.
- Maximum gate-source voltage rating of ±20 volts for stable gate control.
Product Description
Infineon IRFR5305TRPBF is a HEXFET series P-Channel MOSFET designed for high performance electronic and power management systems. It supports a maximum continuous drain current of 31 amperes and a drain-source voltage of 55 volts, making it suitable for demanding industrial and automotive applications.
This enhancement mode device comes in a compact TO-252 surface mount package, providing ease of installation on printed circuit boards. Its low on-resistance of 65 milliohms reduces power losses and heat generation during operation, enhancing overall efficiency in switching and power circuits.
Engineered for reliability, the MOSFET operates over a wide temperature range from -55°C to +175°C, facilitating use in extreme environmental conditions. The maximum power dissipation rating of 110 watts supports high power applications including motor controls and switching power supplies.
The device's typical gate charge of 63 nanocoulombs enables quick switching speeds, which, combined with its gate-source voltage ratings of -20V to +20V, ensures precise control for efficient circuit performance. Its three-pin TO-252 lead configuration accommodates standard PCB designs without requiring special modifications.
Common applications include power management systems, automotive circuit implementations, and industrial automation electronics where high current and robust performance are critical.
Efficient surface mount TO-252 package for modern PCB designs. Robust operation over wide temperature range ideal for automotive and industrial use. Low RDS(on) reduces energy loss and heat buildup. High continuous current rating suited to power electronics.
Fast gate switching facilitates improved device performance.
This MOSFET is a reliable choice for engineers requiring a high-quality P-Channel device to manage power effectively across multiple electronic applications. Discover more advanced semiconductor components in the discrete semiconductor category at EnvMart.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IRFR5305TRPBF is 31 amperes.
This model has a maximum drain-source voltage rating of 55 volts.
The maximum drain-source resistance (RDS(on)) is 65 milliohms.
It operates reliably from -55°C to +175°C, making it suitable for extreme environmental conditions.
The device comes in a TO-252 package and is designed for surface mounting.
The typical gate charge (Qg) at Vgs is 63 nanocoulombs.
It has a maximum power dissipation rating of 110 watts.
The maximum gate-source voltage rating is ±20 volts.
This model features a three-pin configuration.
It is suitable for power management systems, automotive circuit implementations, and industrial automation electronics.
The Infineon IRFR5305TRPBF is manufactured in India.
This device uses an enhancement mode P-channel type channel.
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