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Vishay N-Channel MOSFET Power Transistor 25 A 150 V TO-252AA Surface Mount SUD25N15-52-E3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin Taiwan
Brand Vishay
Height 2.38mm
Length 6.22mm
Model SUD25N15-52-E3
Width 6.73mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type TO-252AA
Minimum Operating Temperature -55°C
Standards/Approvals RoHS 2002/95/EC
Channel Type N
Maximum Continuous Drain Current Id 25A
Maximum Drain Source Voltage Vds 150V
Maximum Drain Source Resistance Rds 0.052Ω
Maximum Power Dissipation Pd 136W
Typical Gate Charge Qg @ Vgs 40nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.5V

Key Features

  • Designed for surface mount applications with TO-252AA package type.
  • Offers low drain-source resistance of 0.052 ohms at Vgs = 10 V for high efficiency.
  • Capable of dissipating up to 136 W power with excellent thermal performance.
  • Operates over a temperature range from -55°C to 175°C suitable for industrial environments.
  • Maximum gate-source voltage rating of ±20 V for reliable switching.
  • Typical gate charge of 40 nC at Vgs enhancing switching efficiency.
  • Forward voltage drop of 1.5 V ensures minimal conduction losses.
  • Pb-free compliant for environmentally friendly applications.

Product Description

Vishay SUD25N15-52-E3 is a high-performance N-Channel MOSFET designed for power electronics requiring efficient switching and conduction capabilities. This transistor features a maximum continuous drain current of 25 A and a drain-source voltage of 150 V, housed in a TO-252AA surface mount package suitable for compact industrial PCBs.

Optimized for low switching and conduction losses, the MOSFET offers a very low drain-source resistance of 0.052 ohms at a gate-source voltage of 10 V. The device’s maximum power dissipation is 136 W, allowing it to handle significant power loads without overheating.

It can operate reliably across a wide temperature range from -55°C to 175°C, making it suitable for harsh industrial, commercial, and automotive electronics applications. The maximum allowable gate-source voltage is ±20 V, providing robust gate control for switching applications.

This component includes a typical gate charge of 40 nC at Vgs, which supports fast switching, reducing power losses in PWM applications. The forward voltage of 1.5 V contributes to reducing conduction losses and improving overall efficiency.

The product complies with RoHS 2002/95/EC regulations, ensuring it is lead-free and environmentally compliant. Made in Taiwan, Province of China, this MOSFET is ideal for use in primary side switches, power management circuits, and general-purpose power conversion systems.

Designed for efficient power switching and conduction in industrial electronics. Suitable for applications requiring surface mount technology. Ensures long operational life and performance stability under high thermal stress.

Complies with environmental safety standards for hazardous substances. Packaged in TO-252AA for optimal mounting and heat dissipation.

EnvMart offers this Vishay MOSFET as part of our power semiconductor selection. Explore related components in our Electronics & Electricals > Discrete Semiconductors > MOSFET category for your industrial and laboratory power solutions.

Vishay N-Channel MOSFET Power Transistor 25 A 150 V TO-252AA Surface Mount SUD25N15-52-E3
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Frequently Asked Questions

The maximum continuous drain current for the SUD25N15-52-E3 is 25 A.

This model has a maximum drain-source voltage rating of 150 V.

It can dissipate up to 136 W of power, allowing it to handle significant loads efficiently.

The drain-source resistance is 0.052 ohms at a gate-source voltage of 10 V.

The typical gate charge is 40 nC at a gate-source voltage of Vgs.

The forward voltage drop is 1.5 V, which helps in minimizing conduction losses.

It operates reliably over a temperature range from -55°C to 175°C.

The SUD25N15-52-E3 is housed in a TO-252AA surface mount package.

The dimensions are 6.22 mm in length, 6.73 mm in width, and 2.38 mm in height.

The maximum gate-source voltage rating is ±20 V.

Yes, it complies with RoHS 2002/95/EC regulations, ensuring it is lead-free and environmentally compliant.

This model is manufactured in Taiwan, Province of China.

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