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Vishay P-Channel MOSFET 1.2 A, 5.5 V, Surface Mount SC-70-6 Package SIP32431DR3-T1GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin Taiwan
Brand Vishay
Height 1.1mm
Length 2.15mm
Model SIP32431DR3-T1GE3
Width 2.2mm
Mount Type Surface
Series SiP32431DR
Maximum Operating Temperature 85°C
Package Type SC-70-6
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 6
Channel Type Type P
Maximum Continuous Drain Current Id 1.2A
Maximum Drain Source Voltage Vds 5.5V
Maximum Drain Source Resistance Rds 147mΩ
Maximum Power Dissipation Pd 250mW

Key Features

  • The MOSFET features a low on-resistance of 147 milliohms reducing conduction losses.
  • It supports a power dissipation of 250 milliwatts suitable for moderate thermal loads.
  • Operating temperature ranges from -40°C to 85°C for industrial and consumer environments.
  • Packaged in a compact 6-pin SC-70-6 surface mount package enabling space-saving board designs.
  • RoHS compliant construction ensures lead-free manufacturing.
  • Ideal for handheld and portable device power path management.
  • Suitable for battery-protection, load-switch circuits, and reverse-polarity protection.
  • Allows dense PCB assembly with small footprint dimensions (Height 1.1mm, Length 2.15mm, Width 2.2mm).

Product Description

Vishay SIP32431DR3-T1GE3 is a high-performance P-Channel MOSFET designed for low-voltage switching applications in compact electronic devices. With a maximum continuous drain current of 1.2 A and a maximum drain-source voltage of 5.5 V, it is optimized for efficient power management on densely populated printed circuit boards.

This surface mount MOSFET is housed in a six-pin SC-70-6 package, providing a very small footprint with dimensions of 1.1 mm in height, 2.15 mm in length, and 2.2 mm in width, making it ideal for space-constrained designs in handheld and portable electronics.

The device features low on-resistance of 147 milliohms, which minimizes conduction losses and enhances energy efficiency. It can dissipate up to 250 milliwatts of power, suitable for moderate thermal conditions. The operational temperature range from -40°C to 85°C allows stable performance in various industrial and consumer ambient environments.

Manufactured with RoHS-compliant lead-free materials, this MOSFET meets environmental directives for safe electronics production. Typical applications include battery-protection circuits, load-switch managing, low-voltage reverse-polarity protection, and general power switching in compact or wearable electronic devices.

Low on-resistance of 147 mΩ reduces conduction losses. Continuous drain current rating of 1.2 A. Maximum drain-source voltage of 5.5 V. Surface mount SC-70-6 package for space-efficient designs. Power dissipation capacity of 250 mW.

Operating temperature range from -40°C to 85°C. RoHS compliant for lead-free manufacturing. Ideal for handheld, portable, and wearable electronics power management.

This MOSFET is part of Vishay’s SiP32431DR series and is well-suited for use in industrial, consumer electronics, communications, and other applications that require reliable low voltage switching solutions. Browse more Vishay semiconductor components at EnvMart for comprehensive industrial electronics needs.

Vishay P-Channel MOSFET 1.2 A, 5.5 V, Surface Mount SC-70-6 Package SIP32431DR3-T1GE3
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Frequently Asked Questions

The maximum continuous drain current for the SIP32431DR3-T1GE3 is 1.2 A.

This MOSFET has a maximum drain-source voltage of 5.5 V.

It can dissipate up to 250 milliwatts of power.

The dimensions of the SC-70-6 package are 1.1 mm in height, 2.15 mm in length, and 2.2 mm in width.

The operating temperature range is from -40°C to 85°C.

Yes, the SIP32431DR3-T1GE3 is RoHS compliant, ensuring lead-free manufacturing.

The on-resistance is 147 milliohms, which helps reduce conduction losses.

It is suitable for battery-protection circuits, load-switch managing, and low-voltage reverse-polarity protection.

The SC-70-6 package has 6 pins.

This model features a P-channel type.

The country of origin for this MOSFET is Taiwan.

This MOSFET is part of the SiP32431DR series.

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