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Vishay Dual N-Channel MOSFET 4.1 A 150 V Enhancement Mode 8-Pin PowerPack SI7956DP-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 6.25mm |
| Model | SI7956DP-T1-GE3 |
| Width | 5.26mm |
| Mount Type | Surface |
| Series | SI7956DP |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPack |
| Minimum Operating Temperature | -50°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.1A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 0.1Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.5W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Dual |
Key Features
- This MOSFET supports a 150 V maximum drain-source voltage enabling high-voltage operations.
- It features a continuous drain current rating of 4.1 A suitable for medium load currents.
- The enhancement mode device provides reliable switching in compact, surface-mount designs.
- The maximum drain-source resistance is 0.1 ohms, minimizing conduction losses.
- Typical gate charge of 17 nC allows predictable and efficient switching energy.
- It has a maximum power dissipation of 3.5 W, requiring thermal management for safe operation.
- Operating temperature range from -50°C to 150°C ensures performance in extreme environments.
- Dual transistor configuration facilitates use in half-bridge and complementary switching circuits.
Product Description
Vishay SI7956DP-T1-GE3 is a dual N-channel MOSFET in a compact 8-pin PowerPack surface-mount package designed for robust high-voltage switching and control tasks. This enhancement-mode transistor provides excellent performance for applications requiring a 150 V maximum drain-source voltage and 4.1 A continuous current. The device’s low on-resistance of 0.1 ohm helps reduce conduction losses and improve energy efficiency in power management.
Its typical gate charge of 17 nC provides predictable switching characteristics, suitable for standard gate driver circuits. The MOSFET can safely dissipate up to 3.5 W of power, provided adequate thermal management such as heatsinking or PCB copper area is implemented to maintain junction temperatures within the specified -50°C to 150°C range.
The integrated dual transistor configuration is ideal for motor driver half-bridge stages, high-voltage industrial power switching, DC-DC converters requiring complementary transistor pairs, and battery management systems doing low-side switching. The compact PowerPack surface-mount package eases integration into space-constrained circuit boards while supporting thermal conduction through its package body.
150 V drain-source rating enables high-voltage switching capability. 4.1 A continuous drain current supports sustained load currents. 0.1 ohm maximum Rds(on) reduces conduction losses. Typical gate charge of 17 nC yields efficient switching.
Maximum power dissipation of 3.5 W manages thermal load. Operating temperature range from -50°C to 150°C for harsh conditions. Dual transistor configuration suits complementary switching and parallel operation. 8-pin PowerPack surface-mount package designed for dense PCB layouts.
This product is widely used in industrial controls, motor drivers, power converters, and battery management systems. It combines compact size, robust specifications, and efficient switching performance suitable for demanding electronics manufacturing.
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Frequently Asked Questions
The maximum drain-source voltage for this MOSFET is 150 V.
This model has a continuous drain current rating of 4.1 A.
The maximum power dissipation for this device is 3.5 W, requiring proper thermal management.
The typical gate charge for this model is 17 nC, allowing for efficient switching.
The maximum drain-source resistance (Rds) is 0.1 ohms, which helps minimize conduction losses.
It operates within a temperature range of -50°C to 150°C, making it suitable for extreme environments.
The SI7956DP-T1-GE3 comes in an 8-pin PowerPack surface-mount package.
This model features a dual transistor configuration, suitable for half-bridge and complementary switching applications.
The dimensions of this model are 6.25 mm in length, 5.26 mm in width, and 1.12 mm in height.
The maximum gate-source voltage for this MOSFET is 20 V.
This model is widely used in industrial controls, motor drivers, power converters, and battery management systems.
This device uses an enhancement mode N-channel configuration.
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