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Vishay Dual Plus Integrated Schottky P-Channel MOSFET, 4.5 A, 30 V, 6-Pin PowerPAK SC-70-6L SIA817EDJ-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.75mm |
| Length | 2.05mm |
| Model | SIA817EDJ-T1-GE3 |
| Width | 2.05mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SC-70-6L |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.065Ω |
| Maximum Power Dissipation Pd | 6.5W |
| Typical Gate Charge Qg @ Vgs | 6.6nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | 0.56V |
| Transistor Configuration | Dual Plus Integrated Schottky |
| Typical ESD protection (MOSFET) | 1500 V (HBM) |
Key Features
- The device features a low drain-source resistance of 0.065 ohms at 10V gate-source voltage for efficient switching.
- It incorporates a dual plus integrated Schottky diode configuration for enhanced performance.
- Operates reliably between temperatures of -55°C to 150°C, suitable for demanding environments.
- The gate-source voltage rating is 12 V maximum, with a typical gate charge of 6.6 nC at Vgs.
- Compact package dimensions of 2.05 mm length, 2.05 mm width, and 0.75 mm height allow for small footprint PCB designs.
- Offers a typical forward voltage of 0.56 V and ESD protection of 1500 V (HBM) for device robustness.
- Manufactured in China with no automotive standard compliance.
Product Description
Vishay SIA817EDJ-T1-GE3 is a precision Dual Plus Integrated Schottky P-Channel Power MOSFET packaged in a thermally enhanced 6-Pin PowerPAK SC-70-6L for surface mounting. It is engineered to deliver a maximum continuous drain current of 4.5 A and withstand a drain-source voltage of 30 V, ideal for power switching applications requiring high efficiency and low losses.
This MOSFET features an exceptionally low Rds(on) of 0.065 ohms at a gate-source voltage of 10 V, ensuring minimal conduction losses and improved thermal performance in compact electronic circuits. Its thermally enhanced PowerPAK SC-70 package has a thin profile of 0.75 mm, fitting well in space-constrained layouts.
The transistor configuration includes dual plus integrated Schottky diodes which effectively reduce switching losses and improve the overall efficiency of power systems. The device supports gate-source voltages up to 12 V with a typical gate charge of 6.6 nC, balancing fast switching speed with ease of drive.
Operating temperature range spans from -55°C to 150°C, making it suitable for use in industrial, automotive (non-compliant), and commercial electronics that require reliable performance under varied thermal conditions.
Physical dimensions are compact at 2.05 mm by 2.05 mm, allowing integration into small form factor designs. It is built with robust ESD protection rated at 1500 V (HBM), providing durability against electrostatic discharge events during handling and operation.
Applications of the Vishay SIA817EDJ-T1-GE3 include power management, load switching, and driver circuits in industrial and electronic components sectors. It is an excellent choice for designers seeking efficiency and compact power MOSFET solutions.
Manufactured in China, this new-condition MOSFET lacks specific automotive standard approvals but meets demanding industrial requirements. It is part of Vishay's reliable semiconductor portfolio. Browse the Electronics & Electricals category on EnvMart for more MOSFET solutions.
The device features a low drain-source resistance of 0.065 ohms at 10V gate-source voltage for efficient switching. It incorporates a dual plus integrated Schottky diode configuration for enhanced performance. Operates reliably between temperatures of -55°C to 150°C, suitable for demanding environments.
The gate-source voltage rating is 12 V maximum, with a typical gate charge of 6.6 nC at Vgs. Compact package dimensions of 2.05 mm length, 2.05 mm width, and 0.75 mm height allow for small footprint PCB designs. Offers a typical forward voltage of 0.56 V and ESD protection of 1500 V (HBM) for device robustness.
Manufactured in China with no automotive standard compliance. Explore more Vishay power semiconductors and related electronic components in the MOSFET and discrete semiconductor categories at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.5 A.
This unit has a maximum drain-source voltage rating of 30 V.
The maximum gate-source voltage for this MOSFET is 12 V.
The package dimensions are 2.05 mm in length, 2.05 mm in width, and 0.75 mm in height.
The typical gate charge at Vgs is 6.6 nC.
The drain-source resistance is 0.065 ohms at a 10 V gate-source voltage.
It operates reliably between temperatures of -55°C to 150°C.
The typical forward voltage is 0.56 V.
This model supports surface mounting.
It offers ESD protection rated at 1500 V (HBM).
This device has a pin count of 6.
The transistor configuration includes dual plus integrated Schottky diodes.
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