$0.45
$0.44
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay TrenchFET Type P-Channel MOSFET 7.2 A 40 V Enhancement Surface Mount SO-8 Package SI4447ADY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.75mm |
| Length | 5mm |
| Model | SI4447ADY-T1-GE3 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 7.2A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 62mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.7W |
| Typical Gate Charge Qg @ Vgs | 11.8nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Offers a drain-source resistance of 62 milliohms suitable for efficient switching.
- Supports a maximum power dissipation of 2.7 watts for reliable operation.
- Operates within a temperature range from -55°C to 150°C.
- Features an enhancement mode channel providing precise control over conduction.
- Equipped with a maximum gate-source voltage rating of 20 volts for enhanced durability.
- Typical gate charge is 11.8 nanoCoulombs at Vgs, enabling fast switching performance.
- Compact SO-8 package dimensions of 5 mm length, 6.2 mm width, and 1.75 mm height facilitate integration.
- Halogen-free and lead-free compliant, ensuring environmentally safe usage.
Product Description
Vishay SI4447ADY-T1-GE3 is a TrenchFET Type P-Channel MOSFET, providing 7.2 A continuous drain current and 40 V maximum drain-source voltage. The device uses an enhancement mode channel and comes in a compact surface mount SO-8 package, with dimensions of 5 mm length, 6.2 mm width, and 1.75 mm height. It features a maximum power dissipation rating of 2.7 watts, making it suitable for efficient and reliable power management in modern electronic designs.
This MOSFET offers a low maximum drain-source resistance of 62 milliohms at a gate-source voltage of 10 V, enabling reduced conduction losses and improved system efficiency. It supports gate-source voltages up to 20 volts and typical gate charge of 11.8 nC, supporting high-speed switching applications. The device operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for demanding industrial, consumer electronics, and computing environments.
The product is halogen-free and lead (Pb) free, meeting environmental regulations and standards for safe use. Its TrenchFET power MOSFET technology improves switching performance and enhances device longevity without sacrificing power efficiency or reliability.
Common applications include adaptor switches, load switches, and power management for notebook PCs, where efficient switching and minimal power loss are critical. This MOSFET is optimized for low switching and conduction losses, enabling design engineers to enhance overall system performance.
Drain-source voltage: 40 V. Continuous drain current: 7.2 A. Maximum power dissipation: 2.7 W. Package type: 8-pin SO-8 surface mount. Operating temperature range: -55°C to 150°C. Maximum gate-source voltage: 20 V. Typical gate charge: 11.8 nC.
Originating from China, this Vishay MOSFET delivers robust industrial-grade quality for a variety of electronic and power management circuits. Its specifications and dimensions suit integration into compact PCB layouts. The device is not automotive standard certified but meets ANSI/ESD S20.20 (2014) and BS EN 61340-5-1 (2007) standards for electrostatic discharge protection, enhancing device durability in manufacturing and application environments.
Explore more Vishay MOSFETs and discrete semiconductors on EnvMart for tailored industrial and electronic component solutions.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 7.2 A.
This device has a maximum drain-source voltage rating of 40 V.
It supports a maximum power dissipation of 2.7 watts.
The SO-8 package dimensions are 5 mm in length, 6.2 mm in width, and 1.75 mm in height.
It operates within a temperature range from -55°C to 150°C.
The maximum gate-source voltage rating is 20 V.
The typical gate charge is 11.8 nanoCoulombs at Vgs.
It features an enhancement mode channel, allowing precise control over conduction.
Yes, it is halogen-free and lead-free compliant, ensuring environmentally safe usage.
It meets ANSI/ESD S20.20 (2014) and BS EN 61340-5-1 (2007) standards for electrostatic discharge protection.
The maximum drain-source resistance is 62 milliohms at a gate-source voltage of 10 V.
Common applications include adaptor switches, load switches, and power management for notebook PCs.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$1.64
$1.59
-3%
New
Recently Viewed Products
$702.27
$681.20
-3%
New
$0.45
$0.44
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent