DiodesZetex Isolated 2 N-Channel Power MOSFET 260mA 30V Enhancement 6-Pin SOT-563 DMN63D8LV-7

DiodesZetex DMN63D8LV-7 isolated 2 N-Channel power MOSFET is engineered for efficient power switching in compact electronic circuits. Featuring a dual N-Channel transistor configuration, this device supports a maximum continuous drain current of 260mA and can sustain up to 30V drain-source voltage, making it suitable for low power and automotive applications. The 6-pin SOT-563 surface mount package offers a small form factor with a height of 0.6mm, length of 1.7mm, and width of 1.25mm, facilitating compact circuit board layouts and automated assembly.

Designed with an enhancement mode channel, the DMN63D8LV-7 provides reliable switching with a low typical gate charge of 0.4nC at Vgs, which minimizes power loss and improves switching speed. Its maximum power dissipation rating of 450mW allows efficient thermal handling within its compact size. The device operates effectively over a wide temperature range from -55°C to +150°C, ensuring durability in demanding environmental conditions. Forward voltage of 0.8V contributes to reduced conduction losses.

This MOSFET is certified to multiple industry standards including UL 94V-0 flammability rating, J-STD-020 for moisture sensitivity, MIL-STD-202 for environmental testing, and meets the AEC-Q101 automotive qualification. It is compliant with RoHS directives, ensuring it is free from hazardous substances.

Typical applications include automotive electronics, industrial control circuits, and general power management in compact devices that require efficient, reliable transistor switching with low power dissipation. The isolated transistor configuration enhances device integration in dual-channel switching and load control scenarios.

Dual N-Channel MOSFET configuration enhances switching efficiency. Maximum continuous drain current of 260mA supports low power applications. Enhancement channel mode provides reliable operation. Surface mount package SOT-563 with 6 pins ensures compact PCB design.

Operating temperature range from -55°C to +150°C enables use in harsh environments. Maximum power dissipation of 450mW balances thermal management. Low typical gate charge of 0.4nC contributes to fast switching. Forward voltage of 0.8V aids in efficiency.

Complies with automotive standard AEC-Q101 and RoHS directives. Robust standards approval including UL 94V-0, J-STD-020, MIL-STD-202 ensure reliability. Explore more Power MOSFETs and electronic components on EnvMart to meet your industrial, automotive, and manufacturing requirements.