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Vishay SQ Rugged Type P-Channel MOSFET, 11 A, 60 V Enhancement Mode, 3-Pin TO-252 SQD19P06-60L_GE3
Specifications
| Country of Origin | Taiwan |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | SQD19P06-60L_GE3 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | SQ Rugged |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 46W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.5V |
Key Features
- Enhancement mode device with maximum power dissipation of 46 W.
- Surface mount with 3 pins optimized for rugged industrial applications.
- Typical gate charge of 27 nC at Vgs, supporting efficient switching.
- Operating temperature range from -55°C to 175°C for reliability.
- Complies with automotive standard AEC-Q101 for harsh environments.
- Maximum gate-source voltage rated at -20 to +20 V ensuring robust gate control.
- Maximum drain-source resistance of 125 mΩ minimizing conduction losses.
- Forward voltage of -1.5 V enabling efficient conduction characteristics.
Product Description
Vishay SQD19P06-60L_GE3 represents a rugged P-Channel MOSFET designed for high-performance power management in industrial and automotive electronic applications.
This TO-252 packaged semiconductor device supports a continuous drain current up to 11 A and can withstand drain-source voltages of 60 V, providing reliable operation under demanding electrical loads.
The enhancement mode channel ensures efficient switching behavior, aided by a typical gate charge of 27 nC at the gate-source voltage, optimizing switching speeds and power efficiency.
With a surface mount configuration and 3-pin layout, the device facilitates easy PCB integration, while its rugged build meets the automotive AEC-Q101 standard, supporting use in harsh environmental conditions.
Operating temperature spans a wide range from -55°C up to 175°C, making it suitable for industrial manufacturing, automotive systems, and control units requiring thermal durability.
The MOSFET features a low maximum drain-source resistance of 125 mΩ, minimizing conduction losses and heat generation. Forward voltage is measured at -1.5 V, ensuring effective current conduction during operation.
Compact physical dimensions of 6.73 mm length, 6.22 mm width, and 2.38 mm height enable space-saving designs in densely packed electronic circuits. Produced in Taiwan, this MOSFET is backed by Vishay’s semiconductor expertise and quality assurance.
Enhancement mode P-Channel MOSFET for power switching applications. Supports continuous drain current of 11 A and drain-source voltage of 60 V. Surface mount package TO-252 with 3 pins for efficient PCB mounting. Wide operating temperature from -55°C to 175°C for industrial robustness.
Meets automotive AEC-Q101 standard for reliable harsh environment performance. Low drain-source resistance (125 mΩ) reduces conduction losses. Typical gate charge 27 nC at Vgs enables efficient switching. Compact dimensions suitable for space-constrained circuit designs.
This product is ideal for use in industrial electronics, automotive power control modules, and any application requiring high-reliability MOSFET switching components. For further products and specifications, browse the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 A.
It can withstand a maximum drain-source voltage of 60 V.
The operating temperature range spans from -55°C to 175°C.
The typical gate charge at Vgs is 27 nC.
The maximum power dissipation is rated at 46 W.
The maximum drain-source resistance is 125 mΩ.
It comes in a TO-252 surface mount package with 3 pins.
This device complies with the automotive standard AEC-Q101.
The forward voltage is measured at -1.5 V.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
This model features an enhancement mode P-Channel type channel.
This product is manufactured in Taiwan.
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