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Vishay SQ Rugged Type P-Channel MOSFET 50 A 30 V Enhancement 3-Pin TO-252 SQD45P03-12_GE3
Specifications
| Country of Origin | Taiwan |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | SQD45P03-12_GE3 |
| Width | 6.22mm |
| Mount Type | PCB |
| Series | SQ Rugged |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101, RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.017Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 71W |
| Typical Gate Charge Qg @ Vgs | 55.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- This device features a TO-252 package and is designed for PCB mounting.
- It has a maximum power dissipation rating of 71 W ensuring reliable performance under load.
- The maximum drain-source resistance (Rds) is 0.017 ohms for efficient conduction.
- It operates over a temperature range from -55°C to 175°C suitable for automotive applications.
- Compliance to AEC-Q101 automotive standards and RoHS certification ensures quality and environmental safety.
- The MOSFET includes a maximum gate-source voltage range of -20 V to +20 V for stable switching.
- Typical gate charge is 55.3 nC at Vgs aiding in fast switching operations.
- The forward voltage drop of 1.5 V helps minimize power losses.
Product Description
Vishay SQD45P03-12_GE3 is a robust P-Channel MOSFET from the SQ Rugged series, specifically engineered to handle up to 50 A continuous current and 30 V drain-source voltage. Featuring an enhancement mode channel and a low on-resistance of 0.017 ohms, this device is ideal for power switching and amplification applications in automotive and industrial electronics.
The MOSFET is housed in a TO-252 package with three pins, designed for PCB mounting, enabling easy integration into designed circuits. It can withstand harsh operating conditions with a minimum operating temperature of -55°C and maximum of 175°C, certified to AEC-Q101 standards which are required in automotive electronics.
This transistor has a maximum power dissipation of 71 W, making it suitable for high power applications, while the typical gate charge of 55.3 nC supports efficient switching characteristics. The device conforms to RoHS standards, ensuring compliance with environmental directives.
Its precise operating voltage range for the gate-source (Vgs) is -20 to +20 V, allowing reliable control of the transistor in sensitive power circuits. The forward voltage drop of 1.5 V helps reduce losses, contributing to energy efficiency in operation.
Dimensionally compact with length 6.73 mm, width 6.22 mm, and height 2.38 mm, this MOSFET is well-suited for space-constrained applications. Originating from Taiwan, Province of China, the product comes from Vishay’s proven semiconductor technology portfolio.
This MOSFET is optimal for automotive electronics, industrial control, power management, and electronic device manufacturing. It offers high reliability under rigorous automotive and industrial standards. Compact footprint with easy PCB mountability for streamlined assembly.
Low Rds(on) ensures efficient power handling and reduced heat generation. Wide operating temperature range for use in extreme environmental conditions. Enables high-efficiency switching and power control in advanced electronic circuits.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 A.
The maximum drain-source voltage for this P-Channel MOSFET is 30 V.
The maximum drain-source resistance (Rds) is 0.017 ohms.
The typical gate charge is 55.3 nC at Vgs.
It operates over a temperature range from -55°C to 175°C.
The maximum power dissipation rating is 71 W.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
This model uses a TO-252 package type.
It complies with AEC-Q101 automotive standards and is RoHS certified.
The maximum gate-source voltage range is -20 V to +20 V.
It is suitable for automotive electronics, industrial control, power management, and electronic device manufacturing.
This MOSFET has a pin count of 3.
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