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Vishay 100 V 40 A Schottky Diode 3-Pin Surface Mount TO-263 Package VB40100C-E3/8W
Specifications
| Country of Origin | China |
|---|---|
| Diameter | 10.45mm |
| Brand | Vishay |
| Height | 4.83mm |
| Length | 10.45mm |
| Model | VB40100C-E3/8W |
| Width | 9.14mm |
| Mount Type | Surface |
| Series | VB40X |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 40A |
| Peak Reverse Repetitive Voltage Vrrm | 100V |
| Diode Configuration | Common Cathode |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 45mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 250A |
| Maximum Forward Voltage Vf | 730mV |
Key Features
- Features patented Trench MOS Barrier Schottky structure for low forward voltage drop.
- Designed for high efficiency in AC/DC switched mode power supplies and DC/DC converters.
- Maximum forward voltage of 730 mV ensures low power loss.
- Capable of handling peak non-repetitive forward surge current of 250 A.
- Operates reliably from -40°C up to 150°C maximum temperature.
- Common cathode diode configuration with 3 pins in TO-263 package.
- Peak reverse current of 45 mA and peak reverse repetitive voltage of 100 V.
Product Description
The Vishay VB40100C-E3/8W is a high-performance Schottky diode designed for industrial and electronic applications requiring efficient power rectification. Featuring a patented Trench MOS Barrier Schottky (TMBS) structure, this diode enables reduced minority carrier injection which minimizes stored charges, enhancing switching speeds compared to planar Schottky rectifiers.
This device supports a maximum continuous forward current of 40 A and a peak reverse voltage of 100 V, making it suitable for AC/DC switched mode power supplies, DC/DC converters, and other power management scenarios requiring fast switching and low forward voltage drop.
Key technical specifications include a maximum forward voltage of 730 mV, peak non-repetitive forward surge current up to 250 A, and an operating temperature range from -40°C to 150°C. The diode is supplied in a 3-pin TO-263 surface mount package, providing a compact footprint with dimensions of 10.45 mm length, 9.14 mm width, and 4.83 mm height.
The common cathode configuration allows flexible circuit designs, while the peak reverse current of 45 mA ensures low leakage during operation. This diode is manufactured in China and conforms to standard industrial electrical component quality.
Applications for the VB40100C-E3/8W extend across power supplies for industrial automation, telecommunications, and consumer electronics requiring efficient rectification solutions with high reliability and thermal endurance.
Patented Trench MOS Barrier Schottky structure improves efficiency and switching speed. High current rating and low forward voltage reduce power dissipation in power circuits. Compact TO-263 package suitable for surface mount assembly and dense PCB layouts.
Wide operating temperature range ensures robustness in varied environments. Ideal for industrial power conversion, telecommunications, and energy management. Explore more electronic components and semiconductor devices in the Schottky Diodes & Rectifiers category at EnvMart.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum continuous forward current for this model is 40 A.
The peak reverse repetitive voltage for this diode is 100 V.
It operates reliably within a temperature range of -40°C to 150°C.
This model comes in a TO-263 package with a common cathode configuration and has 3 pins.
The maximum forward voltage drop is 730 mV.
It can handle a peak non-repetitive forward surge current of up to 250 A.
The peak reverse current for this diode is rated at 45 mA.
The dimensions of the TO-263 package are 10.45 mm in length, 9.14 mm in width, and 4.83 mm in height.
This diode is classified as a Schottky rectifier.
It is commonly used in AC/DC switched mode power supplies and DC/DC converters.
This model is manufactured in China.
The Trench MOS Barrier Schottky structure improves efficiency and enhances switching speeds compared to traditional planar Schottky rectifiers.
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