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Vishay Silicon Junction Switching Diode Single 2 A 600 V Surface DO-214AA Package USB260HM3/52T

Category Discrete Semiconductor Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 2.44mm
Length 4.57mm
Model USB260HM3/52T
Width 3.94mm
Mount Type Surface
Series USB260
Maximum Operating Temperature 150°C
Case DO-201AD Moulding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade
Package Type DO-214AA
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Polarity Colour band denotes cathode end
Terminals Matte tin-plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 90A
Maximum Forward Voltage Vf 1.6V
Peak Reverse Recovery Time trr 30ns
Maximum Forward Current If 2A
Maximum Peak Reverse Repetitive Voltage Vrrm 600V

Key Features

  • Features a glass passivated chip junction for enhanced durability.
  • Offers ultrafast reverse recovery time of 30 nanoseconds.
  • Exhibits low forward voltage drop and low switching losses for high efficiency.
  • Capable of handling high forward surge currents up to 90 A.
  • Solder dip rated at a maximum of 275 °C for 10 seconds.
  • Designed for surface mounting in a compact DO-214AA package.
  • Operates reliably in temperatures ranging from -55 °C to 150 °C.
  • Ideal for high frequency rectification and freewheeling applications in switching mode converters and inverters.

Product Description

Vishay USB260HM3/52T silicon junction switching diode is a single diode device rated for a maximum forward current of 2 A and a peak repetitive reverse voltage of 600 V. It is housed in a standard DO-214AA surface mount package, making it suitable for compact electronic assemblies.

The diode is constructed with a glass passivated chip junction providing excellent stability and reliability. Its ultrafast reverse recovery time of 30 ns reduces switching losses, improving overall circuit efficiency. The device also features a low forward voltage drop around 1.6 V, which minimizes power dissipation during operation.

This diode supports high forward surge currents of up to 90 A, ensuring robustness during transient conditions. It is rated for solder dipping up to 275 °C for 10 seconds according to the JESD 22-B106 standard, ensuring compatibility with industrial soldering processes.

Operating temperature range spans from -55 °C minimum up to 150 °C maximum, allowing deployment in harsh environments. The compact DO-214AA package dimensions of approximately 4.57 mm length, 3.94 mm width, and 2.44 mm height facilitate efficient PCB footprint utilization.

Typical applications include high frequency rectification and freewheeling circuits in switching mode power supplies, converters, and inverters used in consumer electronics, computer hardware, and telecommunications equipment. The diode’s fast switching characteristics, combined with its low forward voltage and high surge capability, enable improved power efficiency and device longevity.

Terminals are matte tin-plated and solderable per J-STD-002 and JESD 22-B102 standards, with E3 suffix parts qualifying for JESD 201 class 1A whisker testing, ensuring dependable solder joint formation. The cathode end is marked with a color band for polarity identification during assembly.

Country of origin is China, and the product conforms to commercial grade RoHS compliance. This diode is a reliable component choice for engineers seeking ultrafast recovery silicon junction diodes optimized for surface mount applications.

Features a glass passivated chip junction for enhanced durability. Offers ultrafast reverse recovery time of 30 nanoseconds. Exhibits low forward voltage drop and low switching losses for high efficiency. Capable of handling high forward surge currents up to 90 A.

Solder dip rated at a maximum of 275 °C for 10 seconds. Designed for surface mounting in a compact DO-214AA package. Operates reliably in temperatures ranging from -55 °C to 150 °C. Ideal for high frequency rectification and freewheeling applications in switching mode converters and inverters.

Suitable for use in consumer electronics, computer, and telecommunication devices. Model USB260HM3/52T ensures consistent performance and efficiency. Explore Vishay semiconductor components and related switching diodes at EnvMart for optimized industrial and electronics manufacturing solutions.

Explore more products in our Discrete Semiconductor category.

Vishay Silicon Junction Switching Diode Single 2 A 600 V Surface DO-214AA Package USB260HM3/52T
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Frequently Asked Questions

The maximum forward current rating for this diode is 2 A.

It features a peak reverse recovery time of 30 nanoseconds.

The maximum peak reverse repetitive voltage is 600 V.

The forward voltage drop is approximately 1.6 V.

The dimensions of the DO-214AA package are approximately 4.57 mm in length, 3.94 mm in width, and 2.44 mm in height.

It operates reliably in temperatures ranging from -55 °C to 150 °C.

This diode is designed for surface mounting.

It can handle high forward surge currents of up to 90 A.

The terminals are matte tin-plated and solderable per J-STD-002 and JESD 22-B102 standards.

The cathode end is marked with a color band for polarity identification during assembly.

It is ideal for high frequency rectification and freewheeling applications in switching mode converters and inverters.

The diode is manufactured in China.

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