Vishay Silicon Junction Switching Diode, Single, 1 A Forward Current, 1 V Peak Reverse Voltage, DO-214AC BYV26EGP-E3/73

Vishay BYV26EGP-E3/73 silicon junction switching diode is engineered for high-performance electronic components, delivering a maximum forward current of 1 A and packaged in a compact DO-214AC through hole mount format.

This diode exhibits a peak reverse voltage of 1 V and a maximum forward voltage of 2.5 V, making it suitable for efficient rectification and switching applications. Its ultrafast peak reverse recovery time of 75 nanoseconds ensures minimal switching losses and high-frequency operation reliability.

Designed to operate in harsh environments, this diode withstands temperature ranges from -65°C to 175°C and can sustain peak non-repetitive forward surge currents up to 30 A, ideal for transient protection in circuits.

The device’s compact physical dimensions (7.6 mm length and height, and 3.6 mm diameter and width) facilitate easy integration into various electronic assemblies, including switched mode power supplies (SMPS), inverters, and freewheeling diode applications.

Single silicon junction diode with 1 A maximum forward current. Through hole mount type with DO-214AC (SMA) package. Peak reverse voltage rating of 1 V and maximum forward voltage of 2.5 V. Fast peak reverse recovery time of 75 nanoseconds suitable for high frequency applications.

Operates within a temperature range from -65°C to 175°C. Supports peak non-repetitive forward surge current up to 30 A. Compact, robust packaging for enhanced reliability.

This switching diode serves critical roles in industrial, manufacturing, and commercial electronics assemblies requiring fast switching and efficient power management. Its robust parameters and Vishay's quality standards provide dependable performance in demanding electrical components.

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