onsemi Silicon Junction Rectifier Diode, Single, 3 A Forward Current, 1 kV Peak Voltage, 2-Pin DO-201AD Package 1N5408RLG

onsemi 1N5408RLG is a silicon junction rectifier diode designed for electronic applications requiring reliable high current and voltage tolerance. With a maximum forward current rating of 3 amperes and a peak reverse voltage of 1 kV, this diode is engineered to handle significant electrical loads while maintaining stability and efficiency.

The component is housed in a through-hole 2-pin DO-201AD package, featuring compact dimensions measuring 9.5 mm in length and height with a diameter and width of 5.3 mm. Its forward voltage drop of 1 volt supports energy-efficient rectification, and a robust peak surge current rating of 200 amperes enables withstand capability during transient conditions.

This diode functions effectively within a broad temperature range from -65°C to 150°C, allowing versatility across industrial, laboratory, power supply, and commercial electronics environments. Its single silicon junction structure provides dependable performance in switching and rectification circuits, commonly found in power control and conversion systems.

Key specifications include the DO-201AD package type and through-hole mounting, which facilitate easy integration into printed circuit boards. With no additional certifications or automotive standards specified, it suits general-purpose industrial applications requiring discrete semiconductor components.

The product supports manufacturing and design engineers seeking dependable Switching Diodes for power electronics, circuit protection, and signal rectification tasks. Its robust ratings and compact form factor make it ideal for use in power supplies, industrial machines, and electronic assemblies.

Supports a maximum forward current of 3 amperes for robust rectification. Can withstand a maximum peak reverse repetitive voltage of 1000 volts for high voltage applications. Designed with a through-hole mount type in a durable DO-201AD package.

Features a low forward voltage drop of 1 volt ensuring efficiency. Rated for peak non-repetitive forward surge current up to 200 amperes for transient events. Operating temperature range spans from -65°C to 150°C for wide environmental tolerance.

Compact dimensions with length and height of 9.5 mm, diameter and width of 5.3 mm. Single silicon junction diode construction suitable for power electronics and circuit protection. Explore more components and semiconductor products at EnvMart for your industrial, manufacturing, and electronic design needs.