Vishay N-Channel MOSFET 27 A 40 V Enhancement Type SO-8 8-Pin Surface Mount SiR416DP-T1-GE3

The Vishay SiR416DP-T1-GE3 is a high-performance N-Channel MOSFET designed for power management applications demanding high continuous drain current up to 27 A and voltage rating of 40 V. Packaged in a compact SO-8 8-pin surface mount package, it is ideal for space-constrained PCB layouts while delivering efficient power switching.

Its low on-resistance (Rds(on)) of 4.2 mΩ ensures minimal conduction losses and improved overall system efficiency. The enhancement channel mode MOSFET supports fast switching speeds, facilitated by a typical gate charge of 59 nC. It operates safely within an extensive temperature range from -55°C to +150°C, suitable for industrial, automotive, and commercial electronics.

With a maximum power dissipation of 69 W, this device is well suited for power converters, motor controllers, DC-DC converters, and other power electronic circuits requiring robust and reliable semiconductor performance. The maximum gate-source voltage allowable is from -20 V to +20 V, providing ample design margin to prevent gate oxide breakdown under transient conditions.

Physical dimensions of 6.25 mm length, 5.26 mm width, and 1.12 mm height enable a small footprint while the forward voltage drop of 0.7 V helps lower energy dissipation during conduction cycles. This MOSFET is manufactured in China to Vishay's high-quality standards and is RoHS compliant.

Applications include industrial power supplies, automotive electronics, battery management systems, and general-purpose switching devices in power management circuits where high current and voltage handling with efficient dissipation is critical.

Offers low on-resistance with a maximum Rds(on) of 4.2 mΩ. Surface mount package suitable for compact PCB designs. Enhanced channel mode for efficient switching performance. Maximum power dissipation of 69 W supports high power applications.

Operates reliably between -55°C and 150°C temperature range. Typical gate charge of 59 nC at Vgs for fast switching operation. Robust maximum gate-source voltage range from -20 V to +20 V. Compact dimensions of 6.25 mm length, 5.26 mm width, and 1.12 mm height.

Forward voltage drop of 0.7 V for minimal conduction losses. Designed and manufactured in China with surface mount technology.

For high reliability in power electronic designs, the Vishay SiR416DP-T1-GE3 MOSFET provides an excellent balance of current, voltage, and thermal performance, fully supported by Vishay's technical documentation and community resources.

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