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Vishay Dual N/P-Channel Isolated TrenchFET MOSFET 8 A 40 V Enhancement 8-Pin SOIC SI4564DY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SI4564DY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.2W |
| Typical Gate Charge Qg @ Vgs | 20.5nC |
| Maximum Gate Source Voltage Vgs | -20, -16, +16, +20V |
| Transistor Configuration | Isolated |
Key Features
- The MOSFET package is SOIC with surface mount technology compatibility.
- It features low drain-source resistance (20mΩ) ensuring efficient power handling.
- Operating temperature ranges from -55°C to +150°C for industrial reliability.
- The device includes two elements per chip configured as isolated dual N and P channels.
- Typical gate charge at Vgs is 20.5 nC for fast switching performance.
- Maximum power dissipation is rated at 3.2 W to support moderate power applications.
- The gate-source voltage range is ±20 V for robust gate drive conditions.
- Package dimensions measure 5 mm in length, 4 mm in width, and 1.55 mm in height.
Product Description
Vishay SI4564DY-T1-GE3 is a Dual N/P-Channel Isolated TrenchFET MOSFET designed for efficient power switching applications. This device supports a maximum continuous drain current of 8 A and a maximum drain-source voltage of 40 V, suitable for various electronic circuits requiring robust transistor performance.
The enhancement mode MOSFET features a low on-resistance of 20 milliohms, which minimizes conduction losses and improves energy efficiency. It is housed in an 8-pin SOIC package optimized for surface mounting on printed circuit boards, enhancing assembly reliability and compactness.
The operating temperature range from -55°C to +150°C enables the device to function reliably in harsh industrial environments. The transistor's isolated configuration with two elements per chip (dual N and P channels) facilitates circuit designs requiring complementary switching devices.
The typical gate charge of 20.5 nC at gate-source voltage ensures fast switching capabilities, making it suitable for high-frequency power conversion and signal amplification. This MOSFET dissipates up to 3.2 W of power, accommodating moderate load conditions without compromising thermal stability.
The gate-source voltage tolerance of ±20 V affords protection against gate damage under transient conditions. The compact physical dimensions of 5 mm length, 4 mm width, and 1.55 mm height support dense PCB layouts and integration into modern electronic assemblies.
Manufactured in China, this Vishay TrenchFET device is ideal for applications in power electronics, industrial automation, consumer electronics, and other semiconductor-requiring systems.
The MOSFET package is SOIC with surface mount technology compatibility. Low drain-source resistance of 20 milliohms reduces power loss. Wide operating temperature from -55°C to +150°C for versatility. Dual N and P isolated MOSFET channels per chip enable complex designs.
Typical gate charge of 20.5 nC supports rapid switching. Maximum power dissipation rating of 3.2 W manages thermal load. Gate-source voltage range of ±20 V protects the gate structure. Compact package dimensions allow space-efficient PCB mounting.
Explore more Vishay semiconductor components and MOSFETs in the Electronics & Electricals category at EnvMart for enhanced industrial and electronic design projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8 A.
It can handle a maximum drain-source voltage of 40 V.
The package dimensions are 5 mm in length, 4 mm in width, and 1.55 mm in height.
The typical gate charge at gate-source voltage (Vgs) is 20.5 nC.
The maximum power dissipation rating is 3.2 W.
The operating temperature range is from -55°C to +150°C.
This MOSFET features dual N and P channels per chip, configured as isolated.
The maximum gate-source voltage range is ±20 V.
The maximum drain-source resistance is 20 mΩ.
This model is designed for surface mounting technology.
The package has 8 pins.
This MOSFET is manufactured in China.
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