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Vishay P-Channel MOSFET 7.2 A, 30 V Enhancement Mode, 8-Pin SOIC Package SI4431CDY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SI4431CDY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | Si4431CDY |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 7.2A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 49mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 4.2W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.71V |
| P-Channel MOSFET Transistor, 4.1 A, 30 V, 8-Pin SOIC Vishay SI9435BDY-T1-E3Brand | Vishay |
Key Features
- Designed for surface mount applications with a compact SOIC package.
- Features a low drain-source resistance of 49 mΩ for efficient performance.
- Operates in enhancement mode with a maximum power dissipation of 4.2 W.
- Temperature range supports operation from -55°C up to 150°C.
- Typical gate charge is 25 nC at Vgs, suitable for high-speed switching.
- Maximum gate-source voltage rating of ±20 V ensures robustness.
- Forward voltage is -0.71 V, optimizing conduction efficiency.
- Physical dimensions are 5 mm length, 4 mm width, and 1.55 mm height.
Product Description
Vishay SI4431CDY-T1-GE3 is a P-Channel MOSFET transistor designed for discrete semiconductor applications requiring efficient power switching. Featuring a maximum continuous drain current of 7.2 A and a maximum drain-source voltage of 30 V, it is suitable for use in power management circuits, automotive applications, and other industrial electronics.
The device comes in a surface mount 8-pin SOIC package, allowing compact PCB layout with reliable mechanical and electrical connections. It operates in enhancement mode, ensuring improved control and switching performance. The low maximum drain-source resistance (Rds) of 49 milliohms reduces conduction losses, thus enhancing energy efficiency.
This MOSFET supports a wide operating temperature range from -55°C to 150°C, which makes it suitable for harsh environmental conditions. It features a typical gate charge of 25 nC at the gate-source voltage, optimized for high-frequency switching applications. The maximum gate-source voltage rating of ±20 V provides protection against voltage spikes and enhances device reliability.
Its compact dimensions (5 mm length, 4 mm width, and 1.55 mm height) make it compatible with modern automated assembly techniques and high-density circuit boards. With a maximum power dissipation of 4.2 W, this device can handle moderate power loads effectively.
Manufactured in China, the Vishay SI4431CDY-T1-GE3 MOSFET is an ideal choice for industrial, automotive, HVAC, manufacturing, and electronic equipment applications that require efficient P-Channel power switching components.
Designed for surface mount applications with a compact SOIC package. Low drain-source resistance enhances energy efficiency. Wide operating temperature range supports industrial environments. Maximum power dissipation of 4.2 W for reliable performance.
Typical gate charge optimized for high-frequency switching. Robust ±20 V gate-source voltage tolerance. Compact physical dimensions for dense PCB layouts. Explore EnvMart's catalog for more Vishay power semiconductors and related electronic components to meet your industrial and commercial design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7.2 A.
It has a maximum drain-source voltage of 30 V.
The typical gate charge at Vgs is 25 nC.
This device can handle a maximum power dissipation of 4.2 W.
The physical dimensions are 5 mm in length, 4 mm in width, and 1.55 mm in height.
It operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage rating is ±20 V.
This model comes in an 8-pin SOIC package suitable for surface mount applications.
The maximum drain-source resistance is 49 mΩ.
It is suitable for power management circuits, automotive applications, and other industrial electronics.
The SI4431CDY-T1-GE3 has 8 pins.
This model features a P-channel type channel.
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